Revision as of 15:01, 14 October 2014

PECVD 2 (Advanced Vacuum)

Deposition Rate: ≈ 7.99 nm/min (users must calibrate this prior to critical deps)
Refractive Index: ≈ 1.958
Stress ≈ 495MPa
HF etch rate:~49nm/min

Deposition Rate: ≈ 28.50 nm/min (users must calibrate this prior to critical deps)
Refractive Index: ≈ 1.474
Stress ≈ -259MPa
HF etch rate~626nm/min

Deposition Rate: ≈ 7.96 nm/min (users must calibrate this prior to critical deps)
Refractive Index: ≈ 1.937
Stress ≈ 2.77MPa
HF etch rate~47nm/min

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 *[[media:AdvPECVD-LS Nitride2 300C standard recipe.pdf|LS Nitride2 Standard Recipe]]
-*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEZvWVhzS1pHUXZkOGcyQWZ4LTNBWGc&usp=drive_web#gid=sharing LS Nitride2 Data September 2014]
+*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEZvWVhzS1pHUXZkOGcyQWZ4LTNBWGc&usp=drive_web#gid=sharing LS Nitride2 Data October 2014]
 *[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dENSak1ZNnVaVTFEQTBzdDJMSDlDTFE&usp=drive_web#gid=1=sharing LS Nitride2 Thickness uniformity 2014]
-*Deposition Rate: ≈ 8.14 nm/min (users must calibrate this prior to critical deps)
+*Deposition Rate: ≈ 7.96 nm/min (users must calibrate this prior to critical deps)
-*Refractive Index: ≈ 1.935
+*Refractive Index: ≈ 1.937
-*Stress ≈ -7.18MPa
+*Stress ≈ 2.77MPa
-*HF etch rate~48nm/min
+*HF etch rate~47nm/min
 == Amorphous-Si deposition (PECVD #2)  ==