PECVD1 Recipes: Difference between revisions
Jump to navigation
Jump to search
| Line 18: | Line 18: | ||
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dDQ3VEtZQVRpdVdlbGtIZHpTNmFzNmc&usp=sharing SiO<sub>2</sub> 1000A Thickness uniformity 2014] |
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dDQ3VEtZQVRpdVdlbGtIZHpTNmFzNmc&usp=sharing SiO<sub>2</sub> 1000A Thickness uniformity 2014] |
||
*Deposition rate~11.25nm/min (users must calibrate this prior to critical deps) |
|||
*HF e.r.~639nm/min |
*HF e.r.~639nm/min |
||
*Stress~-415MPa |
*Stress~-415MPa |
||
Revision as of 17:03, 2 December 2014
PECVD 1 (PlasmaTherm 790)
SiN deposition (PECVD #1)
- SiN Standard Recipe
- SiN Data November 2014
- SiN 1000A Thickness uniformity 2014
- Low Stress Si3N4 - Variable Stress Recipes
- Low Stress Si3N4 - Variable Stress Plot
- Deposition rate~11.25nm/min (users must calibrate this prior to critical deps)
- HF e.r.~89nm/min
- Stress~446MPa
- Refractive Index~1.940
SiO2 deposition (PECVD #1)
- Deposition rate~11.25nm/min (users must calibrate this prior to critical deps)
- HF e.r.~639nm/min
- Stress~-415MPa
- Refractive Index~1.461
SiOxNy deposition (PECVD #1)
- SiOxNy Deposition Recipes - Varying N/O Ratio
- SiOxNy Stress/Index vs. O/N Ratio
- SiOxNy Recipe
- SiOxNy Data November 2014
- SiOxNy 3000A Thickness uniformity 2014
- Deposition rate~14.65nm/min (users must calibrate this prior to critical deps)
- HF e.r.~411nm/min
- Stress~137MPa
- Refractive Index~1.712