PECVD1 Recipes: Difference between revisions
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*Deposition rate~35.52nm/min (users must calibrate this prior to critical deps) |
*Deposition rate~35.52nm/min (users must calibrate this prior to critical deps) |
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*HF e.r.~ |
*HF e.r.~645nm/min |
||
*Stress~- |
*Stress~-408MPa |
||
*Refractive Index~1.461 |
*Refractive Index~1.461 |
||
Revision as of 23:10, 3 December 2014
PECVD 1 (PlasmaTherm 790)
SiN deposition (PECVD #1)
- SiN Standard Recipe
- SiN Data November 2014
- SiN 1000A Thickness uniformity 2014
- Low Stress Si3N4 - Variable Stress Recipes
- Low Stress Si3N4 - Variable Stress Plot
- Deposition rate~11.25nm/min (users must calibrate this prior to critical deps)
- HF e.r.~89nm/min
- Stress~446MPa
- Refractive Index~1.940
SiO2 deposition (PECVD #1)
- Deposition rate~35.52nm/min (users must calibrate this prior to critical deps)
- HF e.r.~645nm/min
- Stress~-408MPa
- Refractive Index~1.461
SiOxNy deposition (PECVD #1)
- SiOxNy Deposition Recipes - Varying N/O Ratio
- SiOxNy Stress/Index vs. O/N Ratio
- SiOxNy Recipe
- SiOxNy Data November 2014
- SiOxNy 3000A Thickness uniformity 2014
- Deposition rate~14.65nm/min (users must calibrate this prior to critical deps)
- HF e.r.~411nm/min
- Stress~137MPa
- Refractive Index~1.712