PECVD1 Recipes: Difference between revisions
Jump to navigation
Jump to search
| Line 38: | Line 38: | ||
== LS SiN deposition (PECVD #1) == |
== LS SiN deposition (PECVD #1) == |
||
<!-- Placeholders - Not uploaded yet--> |
<!-- Placeholders - Not uploaded yet--> |
||
*[[media:PECVD1-LS SiN-Recipe.pdf| |
*[[media:PECVD1-LS SiN-Recipe.pdf|LS SiN Deposition Recipes - Varying N/O Ratio]] |
||
*[[media:PECVD1-SiN-Plot.pdf|LS SiN Stress/Index vs. O/N Ratio]] |
*[[media:PECVD1-SiN-Plot.pdf|LS SiN Stress/Index vs. O/N Ratio]] |
||
*[[media:PECVD1-LS SIN recipe 2014.pdf|LS SiN Recipe]] |
*[[media:PECVD1-LS SIN recipe 2014.pdf|LS SiN Recipe]] |
||
Revision as of 23:41, 5 December 2014
PECVD 1 (PlasmaTherm 790)
SiN deposition (PECVD #1)
- SiN Standard Recipe
- SiN Data December 2014
- SiN 1000A Thickness uniformity 2014
- Low Stress Si3N4 - Variable Stress Recipes
- Low Stress Si3N4 - Variable Stress Plot
- Deposition rate~11.23nm/min (users must calibrate this prior to critical deps)
- HF e.r.~89nm/min
- Stress~450MPa
- Refractive Index~1.942
SiO2 deposition (PECVD #1)
- Deposition rate~35.52nm/min (users must calibrate this prior to critical deps)
- HF e.r.~645nm/min
- Stress~-408MPa
- Refractive Index~1.461
SiOxNy deposition (PECVD #1)
- SiOxNy Deposition Recipes - Varying N/O Ratio
- SiOxNy Stress/Index vs. O/N Ratio
- SiOxNy Recipe
- SiOxNy Data December 2014
- SiOxNy 3000A Thickness uniformity 2014
- Deposition rate~14.99nm/min (users must calibrate this prior to critical deps)
- HF e.r.~417nm/min
- Stress~133MPa
- Refractive Index~1.714
LS SiN deposition (PECVD #1)
- LS SiN Deposition Recipes - Varying N/O Ratio
- LS SiN Stress/Index vs. O/N Ratio
- LS SiN Recipe
- LS SiN Data December 2014
- LS SiN 3000A Thickness uniformity 2014
- Deposition rate~14.99nm/min (users must calibrate this prior to critical deps)
- HF e.r.~417nm/min
- Stress~133MPa
- Refractive Index~1.714