PECVD1 Recipes: Difference between revisions
Jump to navigation
Jump to search
| Line 43: | Line 43: | ||
*[https://docs.google.com/spreadsheets/d/1Joz0az9TGZWQc4CiMQJZzLBbNFbx_hH2Oc0B4NNJmYk/edit#gid=978933038=sharing LS SiN Data December 2014] |
*[https://docs.google.com/spreadsheets/d/1Joz0az9TGZWQc4CiMQJZzLBbNFbx_hH2Oc0B4NNJmYk/edit#gid=978933038=sharing LS SiN Data December 2014] |
||
*[https://docs.google.com/spreadsheets/d/1xIzc2CufRYNSfAtsOXpw3IzHreeu42BWrLBV0kzP6kA/edit#gid=481681015=sharing LS SiN 3000A Thickness uniformity 2014] |
*[https://docs.google.com/spreadsheets/d/1xIzc2CufRYNSfAtsOXpw3IzHreeu42BWrLBV0kzP6kA/edit#gid=481681015=sharing LS SiN 3000A Thickness uniformity 2014] |
||
*Deposition rate~14.99nm/min (users must calibrate this prior to critical deps) |
|||
*HF e.r.~417nm/min |
|||
*Stress~133MPa |
|||
*Refractive Index~1.714 |
|||
Revision as of 23:45, 5 December 2014
PECVD 1 (PlasmaTherm 790)
SiN deposition (PECVD #1)
- SiN Standard Recipe
- SiN Data December 2014
- SiN 1000A Thickness uniformity 2014
- Low Stress Si3N4 - Variable Stress Recipes
- Low Stress Si3N4 - Variable Stress Plot
- Deposition rate~11.23nm/min (users must calibrate this prior to critical deps)
- HF e.r.~89nm/min
- Stress~450MPa
- Refractive Index~1.942
SiO2 deposition (PECVD #1)
- Deposition rate~35.52nm/min (users must calibrate this prior to critical deps)
- HF e.r.~645nm/min
- Stress~-408MPa
- Refractive Index~1.461
LS SiOxNy deposition (PECVD #1)
- SiOxNy Deposition Recipes - Varying N/O Ratio
- SiOxNy Stress/Index vs. O/N Ratio
- SiOxNy Recipe
- SiOxNy Data December 2014
- SiOxNy 3000A Thickness uniformity 2014
- Deposition rate~14.99nm/min (users must calibrate this prior to critical deps)
- HF e.r.~417nm/min
- Stress~133MPa
- Refractive Index~1.714