PECVD1 Recipes: Difference between revisions
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== SiN deposition (PECVD #1) == |
== SiN deposition (PECVD #1) == |
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*[[media:PECVD1-SiN-standard recipe 2014.pdf|SiN Standard Recipe]] |
*[[media:PECVD1-SiN-standard recipe 2014.pdf|SiN Standard Recipe]] |
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*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEN6LV93LXlnbUhIWU1adVZWMWlXYnc&usp=drive_web#gid=sharing SiN Data |
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEN6LV93LXlnbUhIWU1adVZWMWlXYnc&usp=drive_web#gid=sharing SiN Data 2014] |
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*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dElmTXZyOEZsOFdrMVhNLWpKXzVmNWc&usp=sharing SiN 1000A Thickness uniformity 2014] |
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dElmTXZyOEZsOFdrMVhNLWpKXzVmNWc&usp=sharing SiN 1000A Thickness uniformity 2014] |
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Revision as of 16:48, 10 December 2014
PECVD 1 (PlasmaTherm 790)
SiN deposition (PECVD #1)
- SiN Standard Recipe
- SiN Data 2014
- SiN 1000A Thickness uniformity 2014
- Low Stress Si3N4 - Variable Stress Recipes
- Low Stress Si3N4 - Variable Stress Plot
- Deposition rate~11.21nm/min (users must calibrate this prior to critical deps)
- HF e.r.~89nm/min
- Stress~447MPa
- Refractive Index~1.942
SiO2 deposition (PECVD #1)
- Deposition rate~35.52nm/min (users must calibrate this prior to critical deps)
- HF e.r.~645nm/min
- Stress~-408MPa
- Refractive Index~1.461
LS SiOxNy deposition (PECVD #1)
- SiOxNy Deposition Recipes - Varying N/O Ratio
- SiOxNy Stress/Index vs. O/N Ratio
- SiOxNy Recipe
- SiOxNy Data December 2014
- SiOxNy 3000A Thickness uniformity 2014