ASML Stepper 3 Dicing Guide Programming: Difference between revisions

From UCSB Nanofab Wiki
Jump to navigation Jump to search
(initial page, included screenshot and basic programming)
 
(Added negative PR image)
Line 1: Line 1:
<blockquote>''How to program the ASML DUV Stepper #3 to place dicing guides in between die.''</blockquote>
<blockquote>''How to program the ASML DUV Stepper #3 to place dicing guides in between die.''</blockquote>
* Determine a lithography step in the fabrication process during which the addition of dicing guides (crosses) on '''positive PR''' would be acceptable and visible during dicing.
* Determine a lithography step in the fabrication process during which the addition of dicing guides (crosses) would be acceptable and visible during dicing. There are both positive and negative versions of the Cross pattern.
* When programming the job, add an new Image in <code>Wafer Layout > Image Definition</code> for the DicingGuides image, as so:
* When programming the job, add an new Image in <code>Wafer Layout > Image Definition</code> for the DicingGuides image, as so:
** Reticle ID: "'''UCSB-OPC1'''" (hyphenated)
** Reticle ID: "'''UCSB-OPC1'''" (hyphenated)
** For <u>Positive PR image</u>:
** Image Size (Wafer): X = 0.90000; Y = 0.90000 mm
** Image Shift (Wafer): X = -6.750000; Y= -9.450000 mm
*** Image Size (Wafer): X = 0.90000; Y = 0.90000 mm
*** Image Shift (Wafer): X = -6.750000; Y= -9.450000 mm
** [[File:UCSB Dicing Guides - IMG 1199 annotated.jpg|alt=ASML Programming: Image Definition Screen|none|thumb|400x400px|ASML Programming: Image Definition Screen]][[File:UCSB Dicing Guides - Image Location on Reticle - 800px.png|alt=Image Definition: Resulting location on Reticle screenshot|none|thumb|400x400px|Image Definition: Location on Reticle]]
*** [[File:UCSB Dicing Guides - IMG 1199 annotated.jpg|alt=ASML Programming: Image Definition Screen|none|thumb|400x400px|ASML Programming (Positive PR) Image Definition Screen]][[File:UCSB Dicing Guides - Image Location on Reticle - 800px.png|alt=Image Definition: Resulting location on Reticle screenshot|none|thumb|400x400px|Image Definition (Positive PR): Location on Reticle]][[File:GlobalMulti POS - Screen Shot 2018-07-23 at 11.17.23 AM.png|alt=Positive PR Alignment Mark schematic|none|thumb|Positive PR Alignment Mark. Will center the large Cross.]]
**For <u>Negative PR Image</u>:
*** Image Size (wafer scale): X = 0.710000 ; Y = 0.710000 mm
*** Image Shift (wafer scale): X = 6.750000 ; Y = -9.450000 mm[[File:GlobalMulti NEG - Screen Shot 2018-07-23 at 11.22.19 AM.png|alt=Negative PR pattern schematic|none|thumb|Negative PR pattern]]
*** ''More info on either pattern can be [[ASML Stepper 3 - UCSB Test Reticles|found here]].''


* Under <code>Wafer Layout > Image Distribution</code>, add an <code>'''Image-to-Cell Shift'''</code> of '''half the die X/Y size''', and <code>Apply</code> to all die, to place the marks at the corner of every die.
* Under <code>Wafer Layout > Image Distribution</code>, add an <code>'''Image-to-Cell Shift'''</code> of '''half the die X/Y size''', and <code>Apply</code> to all die, to place the marks at the corner of every die.
** The software will only let you place the die at the upper-right (''+X,+Y'') corner. To include the lower-left corners, you will need to make sure you enabled the <code>Wafer Layout > Cell Structure > Die Definition > # of Dies & Minimum per Cell</code> options so it'll shoot partial die.
** The software will only let you place the die at the upper-right (''+X,+Y'') corner. To include the lower-left corners, you will need to make sure you enabled the <code>Wafer Layout > Cell Structure > Die Definition > # of Dies & Minimum per Cell</code> options too shoot partial die at the wafer edges.
** Make sure they don't expose over any of your other alignment marks!
** Make sure they don't expose over any of your other alignment marks!



Revision as of 06:40, 6 August 2018

How to program the ASML DUV Stepper #3 to place dicing guides in between die.

  • Determine a lithography step in the fabrication process during which the addition of dicing guides (crosses) would be acceptable and visible during dicing. There are both positive and negative versions of the Cross pattern.
  • When programming the job, add an new Image in Wafer Layout > Image Definition for the DicingGuides image, as so:
    • Reticle ID: "UCSB-OPC1" (hyphenated)
    • For Positive PR image:
      • Image Size (Wafer): X = 0.90000; Y = 0.90000 mm
      • Image Shift (Wafer): X = -6.750000; Y= -9.450000 mm
      • ASML Programming: Image Definition Screen
        ASML Programming (Positive PR) Image Definition Screen
        Image Definition: Resulting location on Reticle screenshot
        Image Definition (Positive PR): Location on Reticle
        Positive PR Alignment Mark schematic
        Positive PR Alignment Mark. Will center the large Cross.
    • For Negative PR Image:
      • Image Size (wafer scale): X = 0.710000 ; Y = 0.710000 mm
      • Image Shift (wafer scale): X = 6.750000 ; Y = -9.450000 mm
        Negative PR pattern schematic
        Negative PR pattern
      • More info on either pattern can be found here.
  • Under Wafer Layout > Image Distribution, add an Image-to-Cell Shift of half the die X/Y size, and Apply to all die, to place the marks at the corner of every die.
    • The software will only let you place the die at the upper-right (+X,+Y) corner. To include the lower-left corners, you will need to make sure you enabled the Wafer Layout > Cell Structure > Die Definition > # of Dies & Minimum per Cell options too shoot partial die at the wafer edges.
    • Make sure they don't expose over any of your other alignment marks!
  • Screenshot fo resulting die location
    Image Distribution: Example dicing mark locations, using Image-to-Cell Shift to place die at corners.