Direct-Write Lithography Recipes

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Maskless Aligner (Heidelberg MLA150)

Photolithography Recipes for the Heidelberg MLA150. Description of litho params- different lasers available, greyscale etc.

Positive Resist (MLA150)

General notes: Hotplates used, filters, laser wavelengths, etc.

Resist	Spin Cond.	Bake	Thickness	Laser (nm)	Exposure Time|	DeFocus	PEB	Developer	Developer Time	Comments
AZ4110	4 krpm/30s	95°C/60s	~ 1.1 µm	405	240	5	none	AZ400K:DI 1:4	50s	Used MLA design (good for isolated lines 0.8-1um)
AZ4330	4 krpm/30s	95°C/60s	~ 3.3 µm	405	320	6	none	AZ400K:DI 1:4	90s	Used MLA design
AZ4620
SPR 220-3.0	2.5 krpm/30s	115°C/90”	~ 2.7 µm	405	325	- 4	115°C/90s	AZ300MIF	60s	Used MLA design
SPR 955-CM0.9	3 krpm/30s	95°C/90”	~ 0.9 µm	405	250	- 7	110°C/90s	AZ300MIF	60s	Used MLA design
THMR-3600HP

Negative Resist (MLA150)

General notes: Hotplates used, filters, laser wavelengths, etc.

Resist	Spin Cond.	Bake	Thickness	Laser (nm)	Exposure Time	DeFocus	PEB	Flood	Developer	Developer Time	Comments
AZ5214	6 krpm/30s	95°C/60s	~ 1.0 µm	375	35	- 5	110°C/60s	60"	AZ300MIF	60s	Used UCSB design. Good for up to ~1.3um open line space.
AZnLOF2020	4 krpm/30s	110°C/60s	~ 2.1µm	375	340	- 3	110°C/60s	none	AZ300MIF	90s	Used UCSB design. Good for 2um open line space.
SU-8 2075			~70µm	375							Extremely viscous. Pour into a wide-mouthed bottle, dispense directly from bottle. Replace napkin at end.

Greyscale Lithography (MLA150)

Description...

Resist	Spin Cond.	Bake	Thickness	Exposure Time	Focus Offset	PEB	Flood	Developer	Developer Time	Comments
AZ4620Z5214	?? krpm/30”	95°C/60”	?? µm				60"	AZ300MIF	60"	???