ASML DUV: Edge Bead Removal via Photolithography: Difference between revisions

Revision as of 13:18, 27 January 2021

The metal edge-bead removal masks are in the Suss MA-6 Contact Aligner drawers, and I recommend the "4mm recessed"

It loses a bit more device area, but significantly lowers the risk of breaking a wafer in clamped systems such as the DSEiii.

(This process can easily be transferred to I-Line photoresists, using the Suss MA-6 for flood exposure.)

Spun/cure a DUV photoresist using your standard photolith. params (for example UV6).
Place the wafer on the DUV Flood Exposer with the metal mask in place.
Turn on rotation on slow (so mask doesn't move), lamp warmup is not required.
Expose for 13 sec, with slow rotation.
Optionally: PEB 135°C, 60sec, Develop, dry (in SRD), then proceed. This did not affect my primary lithography when I did this step separately. I've also done photo-EBR where I combined this develop with the primary litho.
Load wafer into ASML & Expose your process
PEB 135°C, 90sec
300MiF develop as per your normal process.
- (If you did not develop the EBR yet, it should go away in this step.

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 It loses a bit more device area, but significantly lowers the risk of breaking a wafer in clamped systems such as the DSEiii.
+(This process can easily be transferred to I-Line photoresists, using the [[Contact Aligner (SUSS MA-6)|Suss MA-6]] for flood exposure.)
 === Photo-EBR Process ===