Test Data of etching SiO2 with CHF3/CF4: Difference between revisions
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|After etching diamond sample for 1 hour using Cl2/Ar |
|After etching diamond sample for 1 hour using Cl2/Ar |
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|[https://wiki.nanotech.ucsb.edu/w/images/2/26/I2210508.pdf] |
|[https://wiki.nanotech.ucsb.edu/w/images/2/26/I2210508.pdf] |
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''We stopped taking data for the following table in 2019, use the above data instead.'' |
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Revision as of 18:13, 4 January 2022
ICP#2: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec | |||||
Date | Sample# | Etch Rate (nm/min) | Etch Selectivity (SiO2/PR) | Averaged Sidewall Angle (o) | SEM Images |
10/5/2018 | SiO2#02 | 160 | 1.2 | 82.1 | [1] |
1/28/2019 | I21901 | 146 | 1.23 | [2] | |
3/6/2019 | I21904 | 151 | 1.23 | 85.6 | [3] |
7/18/2019 | I21905 | 162 | 1.37 | [4] | |
1/16/2020 | I22001 | 149 | 1.21 | [5] | |
8/9/2020 | I22002 | 102 | 0.86 | caused by air leaking to CHF3 channel | [6] |
1/7/2021 | I22101 | 144 | 1.20 | [7] | |
5/19/2021 | I22102 | 163 | 1.11 | Etch time=130 sec | [8] |
7/21/2021 | I22103 | 134 | 1.09 | Investigating reports of low etch rate | [9] |
8/9/2021 | I22104 | 147 | 1.06 | Before etching diamond sample for 1 hour using Cl2/Ar | [10] |
8/9/2021 | I22105 | 140 | 0.97 | After etching diamond sample for 1 hour using Cl2/Ar | [11] |
Alternate Data (not updated)
We stopped taking data for the following table in 2019, use the above data instead.