Test Data of etching SiO2 with CHF3/CF4: Difference between revisions

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m (added entry to ICP2, added selectivity for recent cals)
m (made more recent cals on top of table for ICP2)
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|SEM Images
|SEM Images
|-
|-
|10/5/2018
|3/30/2022
⚫
|NP_ICP2_03
⚫
|SiO2#02
|160
|164
⚫
|1.2
⚫
|82.1
⚫
|[https://wiki.nanotech.ucsb.edu/wiki/images/1/13/SiO2_Etch_using_ICP2-no_O2.pdf]
⚫
|-
⚫
|1/28/2019
⚫
|I21901
⚫
|146
|1.23
|1.23
|
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/f/f9/SiO2_Etch_using_ICP2-no_O2-a.pdf]
|[https://wiki.nanotech.ucsb.edu/w/images/c/c3/ICP2_03_45D_002.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/7/74/ICP2_03_CS_003.jpg <nowiki>[2]</nowiki>]
|-
|-
|3/6/2019
|3/8/2022
⚫
|NP_ICP2_02
⚫
|I21904
|151
|144
|1.23
|1.02
⚫
|85.6
⚫
|[https://wiki.nanotech.ucsb.edu/wiki/images/8/87/SiO2_Etch_using_ICP2_no_O2-3-06-2019.pdf]
⚫
|-
|7/18/2019
⚫
|I21905
|162
⚫
|1.37
|
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/2/23/I2190506.pdf]
|[https://wiki.nanotech.ucsb.edu/w/images/f/f4/ICP2_02_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/5/54/ICP2_02_CS_004.jpg <nowiki>[2]</nowiki>]
|-
|-
|1/16/2020
|3/2/2022
⚫
|NP_ICP2_01
⚫
|I22001
⚫
|169.6
⚫
|149
|1.21
|1.29
|
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/0/09/I2200122.pdf]
|[https://wiki.nanotech.ucsb.edu/w/images/2/2e/ICP2_01_45D_002.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/6/69/ICP2_01_CS_007.jpg <nowiki>[2]</nowiki>]
|-
|-
|8/9/2020
|8/9/2021
⚫
|I22105
⚫
|I22002
|102
|140
|0.86
|0.97
⚫
|After etching diamond sample for 1 hour using Cl2/Ar. Found chamber/etches are ok.
⚫
|caused by air leaking to CHF3 channel
|[https://wiki.nanotech.ucsb.edu/w/images/d/d4/I2200203.pdf]
|[https://wiki.nanotech.ucsb.edu/w/images/2/26/I2210508.pdf]
|-
|-
|1/7/2021
|8/9/2021
⚫
|I22104
⚫
|I22101
|144
|147
|1.20
|1.06
⚫
|Before etching diamond sample for 1 hour using Cl2/Ar
⚫
|
|[https://wiki.nanotech.ucsb.edu/w/images/0/0c/I2210102.pdf]
|[https://wiki.nanotech.ucsb.edu/w/images/2/28/I2210411.pdf]
⚫
|-
|5/19/2021
⚫
|I22102
|163
⚫
|1.11
⚫
|Etch time=130 sec
⚫
|[https://wiki.nanotech.ucsb.edu/w/images/4/4c/I2210214.pdf]
|-
|-
|7/21/2021
|7/21/2021
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|[https://wiki.nanotech.ucsb.edu/w/images/c/c3/I2210308.pdf]
|[https://wiki.nanotech.ucsb.edu/w/images/c/c3/I2210308.pdf]
|-
|-
|8/9/2021
|5/19/2021
⚫
|I22102
⚫
|I22104
|147
|163
|1.06
|1.11
⚫
|Etch time=130 sec
⚫
|Before etching diamond sample for 1 hour using Cl2/Ar
|[https://wiki.nanotech.ucsb.edu/w/images/2/28/I2210411.pdf]
|[https://wiki.nanotech.ucsb.edu/w/images/4/4c/I2210214.pdf]
|-
|-
|8/9/2021
|1/7/2021
⚫
|I22101
⚫
|I22105
|140
|144
|0.97
|1.20
⚫
|
⚫
|After etching diamond sample for 1 hour using Cl2/Ar. Found chamber/etches are ok.
|[https://wiki.nanotech.ucsb.edu/w/images/2/26/I2210508.pdf]
|[https://wiki.nanotech.ucsb.edu/w/images/0/0c/I2210102.pdf]
|-
|-
|3/2/2022
|8/9/2020
⚫
|I22002
⚫
|NP_ICP2_01
|102
⚫
|169.6
|1.29
|0.86
⚫
|caused by air leaking to CHF3 channel
⚫
|[https://wiki.nanotech.ucsb.edu/w/images/d/d4/I2200203.pdf]
⚫
|-
|1/16/2020
⚫
|I22001
⚫
|149
⚫
|1.21
|
|
|[https://wiki.nanotech.ucsb.edu/w/images/2/2e/ICP2_01_45D_002.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/6/69/ICP2_01_CS_007.jpg <nowiki>[2]</nowiki>]
|[https://wiki.nanotech.ucsb.edu/wiki/images/0/09/I2200122.pdf]
|-
|-
|3/8/2022
|7/18/2019
⚫
|I21905
⚫
|NP_ICP2_02
|144
|162
|1.02
|1.37
|
|
|[https://wiki.nanotech.ucsb.edu/w/images/f/f4/ICP2_02_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/5/54/ICP2_02_CS_004.jpg <nowiki>[2]</nowiki>]
|[https://wiki.nanotech.ucsb.edu/wiki/images/2/23/I2190506.pdf]
|-
|-
|3/30/2022
|3/6/2019
⚫
|I21904
⚫
|NP_ICP2_03
|164
|151
⚫
|1.23
⚫
|85.6
⚫
|[https://wiki.nanotech.ucsb.edu/wiki/images/8/87/SiO2_Etch_using_ICP2_no_O2-3-06-2019.pdf]
⚫
|-
⚫
|1/28/2019
⚫
|I21901
⚫
|146
|1.23
|1.23
|
|
|[https://wiki.nanotech.ucsb.edu/w/images/c/c3/ICP2_03_45D_002.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/7/74/ICP2_03_CS_003.jpg <nowiki>[2]</nowiki>]
|[https://wiki.nanotech.ucsb.edu/wiki/images/f/f9/SiO2_Etch_using_ICP2-no_O2-a.pdf]
⚫
|-
|10/5/2018
⚫
|SiO2#02
|160
⚫
|1.2
⚫
|82.1
⚫
|[https://wiki.nanotech.ucsb.edu/wiki/images/1/13/SiO2_Etch_using_ICP2-no_O2.pdf]
|}<br />
|}<br />
===Alternate Data (not updated)===
===Alternate Data (not updated)===

Revision as of 20:16, 13 April 2022

ICP#2: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec
Date Sample# Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewall Angle (o) SEM Images
3/30/2022 NP_ICP2_03 164 1.23 [1] [2]
3/8/2022 NP_ICP2_02 144 1.02 [1] [2]
3/2/2022 NP_ICP2_01 169.6 1.29 [1] [2]
8/9/2021 I22105 140 0.97 After etching diamond sample for 1 hour using Cl2/Ar. Found chamber/etches are ok. [1]
8/9/2021 I22104 147 1.06 Before etching diamond sample for 1 hour using Cl2/Ar [2]
7/21/2021 I22103 134 1.09 Investigating reports of low etch rate [3]
5/19/2021 I22102 163 1.11 Etch time=130 sec [4]
1/7/2021 I22101 144 1.20 [5]
8/9/2020 I22002 102 0.86 caused by air leaking to CHF3 channel [6]
1/16/2020 I22001 149 1.21 [7]
7/18/2019 I21905 162 1.37 [8]
3/6/2019 I21904 151 1.23 85.6 [9]
1/28/2019 I21901 146 1.23 [10]
10/5/2018 SiO2#02 160 1.2 82.1 [11]


Alternate Data (not updated)

We stopped taking data for the following table in 2019, use the above data instead.

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