Dry Etching Recipes: Difference between revisions

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|[https://wiki.nanotech.ucsb.edu/wiki/RIE_Etching_Recipes#Photoresist_and_ARC_.28RIE_5.29 R]
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|[https://wiki.nanotech.ucsb.edu/wiki/ICP_Etching_Recipes#Photoresist_.26_ARC_.28Fluorine_ICP_Etcher.29 R] [https://wiki.nanotech.ucsb.edu/wiki/ICP_Etching_Recipes#Photoresist_.26_ARC_.28Fluorine_ICP_Etcher.29 R4]
|[https://wiki.nanotech.ucsb.edu/wiki/ICP_Etching_Recipes#Photoresist_and_ARC_Etching_.28Panasonic_1.29 R]
|[https://wiki.nanotech.ucsb.edu/wiki/ICP_Etching_Recipes#Photoresist_and_ARC_Etching_.28Panasonic_1.29 R]
|[https://wiki.nanotech.ucsb.edu/wiki/ICP_Etching_Recipes#Photoresist_and_ARC_etching_.28Panasonic_2.29 R]
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=== '''Process Ranking Table''' ===
==='''Process Ranking Table'''===
{| class="wikitable"
{| class="wikitable"
|Process Level
|Process Level

Revision as of 22:43, 19 July 2024

Process Control Data

See linked page for process control data (dep rate/stress etc. over time), for a selection of often-used thin-film depositions.

Dry Etching Tools/Materials Table

Dry Etching Recipes
RIE Etching ICP Etching Oxygen Plasma Systems Other Dry Etchers
Material RIE 2
(MRC) 		RIE 3
(MRC) 		RIE 5
(PlasmaTherm) 		DSEIII
(PlasmaTherm) 		Fluorine ICP (PlasmaTherm) ICP Etch 1
(Panasonic E646V) 		ICP Etch 2
(Panasonic E626I) 		Oxford ICP (PlasmaPro 100) ICP-Etch
(Unaxis VLR) 		Ashers
(Technics PEII) 		Plasma Clean (YES EcoClean) UV Ozone Reactor Plasma Activation
(EVG 810) 		XeF2 Etch
(Xetch) 		Vapor HF Etch
(uETCH) 		CAIBE
(Oxford)
Ag A
Al A R1 R1 A
Au R1
Cr A R1 A A
Cu A
Ge A A A A
Mo A
Nb A A
Ni R1
Os A A
Pt R1
Ru A R1 A
Si R1 R1R3 A R1 A
Ta A A A
Ti R1 A A
Al2O3 A R A
Al2O3 (Sapphire) R1 A A
AlGaAs R1 R1 R GaAs-AlGaAs Etch (Unaxis VLR) A
AlGaN R R1 A
AlN R1 A
BCB A
CdZnTe R1 A
GaAs R1 R1 R1 R GaAs-AlGaAs Etch (Unaxis VLR) A
GaN R1 R1 A R R1 A
GaSb A A A GaSb Etch Unaxis VLR) A
HfO2 A
InGaAlAs InP-InGaAsP-InGaAlAs Etching (RIE 2) A InP-InGaAs-InAlAs Etch (Unaxis VLR) A
InGaAsP InP-InGaAsP-InGaAlAs Etching (RIE 2) R InP-InGaAs-InAlAs Etch (Unaxis VLR) A
InP InP-InGaAsP-InGaAlAs Etching (RIE 2) A A R InP-InGaAs-InAlAs Etch (Unaxis VLR) R1
ITO R1 A
LiNbO3 A
Photoresist

& ARC

A R R R4 R R R R A
Ru A R
SiC R1 A A
SiN SiNx Etching (RIE 3) R R4 R1 R1 A A
SiO2 SiO2 Etching (RIE 3) R1R6 R1 R1 R1 A
SiOxNy A A A
SU8 A
Ta2O5 A A A
TiN A
TiO2 A
W-TiW R1 A A
ZnO2 A
ZnS R1 A
ZnSe R1 A
ZrO2 A
Material RIE 2
(MRC) 		RIE 3
(MRC) 		RIE 5
(PlasmaTherm) 		DSEIII
(PlasmaTherm) 		Fluorine ICP (PlasmaTherm) ICP Etch 1
(Panasonic E626I) 		ICP Etch 2
(Panasonic E640) 		Oxford ICP (PlasmaPro 100) ICP-Etch
(Unaxis VLR) 		Ashers
(Technics PEII) 		Plasma Clean (YES EcoClean) UV Ozone Reactor Plasma Activation
(EVG 810) 		XeF2 Etch
(Xetch) 		Vapor HF Etch
(uETCH) 		CAIBE
(Oxford)

Process Ranking Table

Process Level Description of Process Level Ranking
A Process allowed and materials available but never done
R1 Process has been ran at least once
R2 Process has been ran and/or procedure is documented or/and data available
R3 Process has been ran, procedure is documented, and data is available
R4 Process has a documented procedure with regular (≥4x per year) data or lookahead/in-Situ control available
R5 Process has a documented procedure with regular (≥4x per year) data and lookahead/in-Situ control available
R6 Process has a documented procedure, regular ( ≥4x per year) data, and control charts/limits available
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