Dry Etching Recipes: Difference between revisions

Revision as of 22:44, 19 July 2024

See linked page for process control data (dep rate/stress etc. over time), for a selection of often-used thin-film depositions.

Dry Etching Recipes
	RIE Etching			ICP Etching						Oxygen Plasma Systems				Other Dry Etchers
Material	RIE 2 (MRC)	RIE 3 (MRC)	RIE 5 (PlasmaTherm)	DSEIII (PlasmaTherm)	Fluorine ICP (PlasmaTherm)	ICP Etch 1 (Panasonic E646V)	ICP Etch 2 (Panasonic E626I)	Oxford ICP (PlasmaPro 100)	ICP-Etch (Unaxis VLR)	Ashers (Technics PEII)	Plasma Clean (YES EcoClean)	UV Ozone Reactor	Plasma Activation (EVG 810)	XeF2 Etch (Xetch)	Vapor HF Etch (uETCH)	CAIBE (Oxford)
Ag																A
Al			A			R1	R1									A
Au																R1
Cr			A			R1	A									A
Cu																A
Ge						A	A							A		A
Mo																A
Nb						A	A
Ni																R1
Os						A	A
Pt																R1
Ru						A	R1									A
Si				R1	R1R3			A						R1		A
Ta						A	A									A
Ti						R1	A									A
Al₂O₃						A	R									A
Al₂O_{3 (Sapphire)}						R1	A									A
AlGaAs			R1			R1		R	GaAs-AlGaAs Etch (Unaxis VLR)							A
AlGaN								R	R1							A
AlN									R1							A
BCB						A
CdZnTe	R1															A
GaAs			R1			R1	R1	R	GaAs-AlGaAs Etch (Unaxis VLR)							A
GaN			R1			R1	A	R	R1							A
GaSb						A	A	A	GaSb Etch Unaxis VLR)							A
HfO₂																A
InGaAlAs	InP-InGaAsP-InGaAlAs Etching (RIE 2)							A	InP-InGaAs-InAlAs Etch (Unaxis VLR)							A
InGaAsP	InP-InGaAsP-InGaAlAs Etching (RIE 2)							R	InP-InGaAs-InAlAs Etch (Unaxis VLR)							A
InP	InP-InGaAsP-InGaAlAs Etching (RIE 2)					A	A	R	InP-InGaAs-InAlAs Etch (Unaxis VLR)							R1
ITO	R1															A
LiNbO3																A
Photoresist & ARC		A	R		R4	R	R			R	R					A
Ru						A	R
SiC						R1	A									A
SiN		SiN_x Etching (RIE 3)			R4	R1	R1			A						A
SiO₂		SiO₂ Etching (RIE 3)			R6	R1	R1								R1	A
SiOxNy						A	A									A
SU8						A
Ta₂O₅						A	A									A
TiN																A
TiO₂																A
W-TiW						R1	A									A
ZnO₂																A
ZnS	R1															A
ZnSe	R1															A
ZrO₂																A
Material	RIE 2 (MRC)	RIE 3 (MRC)	RIE 5 (PlasmaTherm)	DSEIII (PlasmaTherm)	Fluorine ICP (PlasmaTherm)	ICP Etch 1 (Panasonic E626I)	ICP Etch 2 (Panasonic E640)	Oxford ICP (PlasmaPro 100)	ICP-Etch (Unaxis VLR)	Ashers (Technics PEII)	Plasma Clean (YES EcoClean)	UV Ozone Reactor	Plasma Activation (EVG 810)	XeF2 Etch (Xetch)	Vapor HF Etch (uETCH)	CAIBE (Oxford)

Process Level	Description of Process Level Ranking
A	Process allowed and materials available but never done
R1	Process has been ran at least once
R2	Process has been ran and/or procedure is documented or/and data available
R3	Process has been ran, procedure is documented, and data is available
R4	Process has a documented procedure with regular (≥4x per year) data or lookahead/in-Situ control available
R5	Process has a documented procedure with regular (≥4x per year) data and lookahead/in-Situ control available
R6	Process has a documented procedure, regular ( ≥4x per year) data, and control charts/limits available

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 |[https://wiki.nanotech.ucsb.edu/wiki/RIE_Etching_Recipes#Photoresist_and_ARC_.28RIE_5.29 R]
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-|[https://wiki.nanotech.ucsb.edu/wiki/ICP_Etching_Recipes#Photoresist_.26_ARC_.28Fluorine_ICP_Etcher.29 R] [https://wiki.nanotech.ucsb.edu/wiki/ICP_Etching_Recipes#Photoresist_.26_ARC_.28Fluorine_ICP_Etcher.29 R4]
+|[https://wiki.nanotech.ucsb.edu/wiki/ICP_Etching_Recipes#Photoresist_.26_ARC_.28Fluorine_ICP_Etcher.29 R4]
 |[https://wiki.nanotech.ucsb.edu/wiki/ICP_Etching_Recipes#Photoresist_and_ARC_Etching_.28Panasonic_1.29 R]
 |[https://wiki.nanotech.ucsb.edu/wiki/ICP_Etching_Recipes#Photoresist_and_ARC_etching_.28Panasonic_2.29 R]
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-|[[ICP Etching Recipes#Si3N4 Etching .28Fluorine ICP Etcher.29|R]] [[ICP Etching Recipes#Si3N4 Etching .28Fluorine ICP Etcher.29|R4]]
+|[[ICP Etching Recipes#Si3N4 Etching .28Fluorine ICP Etcher.29|R4]]
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-|{{rl|ICP Etching Recipes|SiO2 Etching (Fluorine ICP Etcher)}}R6
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 |{{rl|ICP Etching Recipes|SiO2 Etching (Panasonic 2)}}