Dry Etching Recipes: Difference between revisions

From UCSB Nanofab Wiki
Jump to navigation Jump to search
← Older editNewer edit →
Content deleted Content added
VisualWikitext
Noahdutra (talk | contribs)
staff
328 edits
m →Dry Etching Tools/Materials Table: Added "R6" to the key/legend description
Ffoong (talk | contribs)
staff
82 edits
m Change A to R1 per Demis, almost all A have been done before.
Line 256: Line 256:
|
|
|
|
|A
|R1
|
|
|
|
Line 472: Line 472:
|A
|A
|A
|A
|A
|R1
|{{rl|ICP Etching Recipes|ICP-Etch (Unaxis VLR)|GaSb Etch Unaxis VLR)}}
|{{rl|ICP Etching Recipes|ICP-Etch (Unaxis VLR)|GaSb Etch Unaxis VLR)}}
|
|
Line 508: Line 508:
|
|
|
|
|A
|R1
|{{rl|ICP Etching Recipes|ICP-Etch (Unaxis VLR)|InP-InGaAs-InAlAs Etch (Unaxis VLR)|InP Etch (Unaxis VLR)}}
|{{rl|ICP Etching Recipes|ICP-Etch (Unaxis VLR)|InP-InGaAs-InAlAs Etch (Unaxis VLR)|InP Etch (Unaxis VLR)}}
|
|

Revision as of 17:49, 29 July 2024

Process Control Data

See above linked page for process control data (dep rate/stress etc. over time), for a selection of often-used dry etches

Dry Etching Tools/Materials Table

The Key/Legend for this table's A...R6 values is at the bottom of the page.

Dry Etching Recipes
RIE Etching ICP Etching Oxygen Plasma Systems Other Dry Etchers
Material RIE 2
(MRC) 		RIE 3
(MRC) 		RIE 5
(PlasmaTherm) 		DSEIII
(PlasmaTherm) 		Fluorine ICP (PlasmaTherm) ICP Etch 1
(Panasonic E646V) 		ICP Etch 2
(Panasonic E626I) 		Oxford ICP (PlasmaPro 100) ICP-Etch
(Unaxis VLR) 		Ashers
(Technics PEII) 		Plasma Clean (YES EcoClean) UV Ozone Reactor Plasma Activation
(EVG 810) 		XeF2 Etch
(Xetch) 		Vapor HF Etch
(uETCH) 		CAIBE
(Oxford)
Ag A
Al A R1 R1 A
Au R1
Cr A R1 A A
Cu A
Ge A A A A
Mo A
Nb A A
Ni R1
Os A A
Pt R1
Ru A R1 A
Si R1 R3 R1 R1 A
Ta A A A
Ti R1 A A
Al2O3 A R A
Al2O3 (Sapphire) R1 A A
AlGaAs R1 R1 R3 GaAs-AlGaAs Etch (Unaxis VLR) A
AlGaN R2 R1 A
AlN R1 A
BCB A
CdZnTe R1 A
GaAs R1 R1 R1 R3 GaAs-AlGaAs Etch (Unaxis VLR) A
GaN R1 R1 A R2 R1 A
GaSb A A R1 GaSb Etch Unaxis VLR) A
HfO2 A
InGaAlAs InP-InGaAsP-InGaAlAs Etching (RIE 2) R1 InP-InGaAs-InAlAs Etch (Unaxis VLR) A
InGaAsP InP-InGaAsP-InGaAlAs Etching (RIE 2) R3 InP-InGaAs-InAlAs Etch (Unaxis VLR) A
InP InP-InGaAsP-InGaAlAs Etching (RIE 2) A A R6 InP-InGaAs-InAlAs Etch (Unaxis VLR) R1
ITO R1 A
LiNbO3 A
Photoresist

& ARC

A R R4 R R R R A
Ru A R
SiC R1 A A
SiN SiNx Etching (RIE 3) R4 R1 R1 A A
SiO2 SiO2 Etching (RIE 3) R6 R1 R1 R1 A
SiOxNy A A A
SU8 A
Ta2O5 A A A
TiN A
TiO2 A
W-TiW R1 A A
ZnO2 A
ZnS R1 A
ZnSe R1 A
ZrO2 A
Material RIE 2
(MRC) 		RIE 3
(MRC) 		RIE 5
(PlasmaTherm) 		DSEIII
(PlasmaTherm) 		Fluorine ICP (PlasmaTherm) ICP Etch 1
(Panasonic E626I) 		ICP Etch 2
(Panasonic E640) 		Oxford ICP (PlasmaPro 100) ICP-Etch
(Unaxis VLR) 		Ashers
(Technics PEII) 		Plasma Clean (YES EcoClean) UV Ozone Reactor Plasma Activation
(EVG 810) 		XeF2 Etch
(Xetch) 		Vapor HF Etch
(uETCH) 		CAIBE
(Oxford)

Process Ranking Table

Processes in the table above are ranked by their "Process Maturity Level" as follows:

Process Level Description of Process Level Ranking
A Process Allowed and materials available but never done
R1 Process has been run at least once
R2 Process has been run and/or procedure is documented or/and data available
R3 Process has been run, procedure is documented, and data is available
R4 Process has a documented procedure with regular (≥4x per year) data or lookahead/in-situ control available
R5 Process has a documented procedure with regular (≥4x per year) data and lookahead/in-situ control available
R6 Process has a documented procedure, regular ( ≥4x per year) data, and control charts & limits available
Retrieved from "https://wiki.nanofab.ucsb.edu/w/index.php?title=Dry_Etching_Recipes&oldid=162132"