Dry Etching Recipes: Difference between revisions
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corrected SiC for ICP2 so that it is R1 instead of R4, which was a mistake to ever put it at R4. Also added a link to GaAs etch on ICP2 |
changed Al2O3 etch from R4 to R3 |
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|[https://wiki.nanotech.ucsb.edu/w/index.php?title=ICP_Etching_Recipes#Al2O3_Etching_.28Panasonic_2.29 |
|[https://wiki.nanotech.ucsb.edu/w/index.php?title=ICP_Etching_Recipes#Al2O3_Etching_.28Panasonic_2.29 R3] |
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Revision as of 21:33, 30 July 2024
fProcess Control Data
See above linked page for process control data (dep rate/stress etc. over time), for a selection of often-used dry etches
Dry Etching Tools/Materials Table
The Key/Legend for this table's A...R6 values is at the bottom of the page.
Process Ranking Table
Processes in the table above are ranked by their "Process Maturity Level" as follows:
| Process Level | Description of Process Level Ranking | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
| A | Process Allowed and materials available but never done | ||||||||||
| R1 | Process has been run at least once | ||||||||||
| R2 | Process has been run and/or procedure is documented or/and data available | ||||||||||
| R3 | Process has been run, procedure is documented, and data is available | ||||||||||
| R4 | Process has a documented procedure with regular (≥4x per year) data or lookahead/in-situ control available | ||||||||||
| R5 | Process has a documented procedure with regular (≥4x per year) data and lookahead/in-situ control available | ||||||||||
| R6 | Process has a documented procedure, regular ( ≥4x per year) data, and control charts & limits available | ||||||||||