Atomic Layer Deposition Recipes

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Atomic Layer Deposition (Oxford FlexAL)

Oxford FlexAL Process Notes

Temperature

"Thermal" ALD, considered the most standard process. Can be slower due to time for reaction to proceed.

To Be Added: effect of varying temeprature

Plasma

O* or N* mean Oxygen/Nitrogen plasma, respectively.

The plasma processes on this tool will run considerably faster than purely thermal proceses, because the reaction time is faster. Also, the O* plasma may reduce carbon contaminants from the organic precursors.

The drawback is that the plasma shutter, which opens/closes between plasma steps, gets coated in materials and can cause higher particle counts. We have attempted to remedy this by keeping the plasma shutter open during all recipes.

Ozone

O3 indicates a recipe using the Ozone generator for reaction. This Ozone-generator must be manually turned on before running the recipe - check with supervisor for details.

More info to be added

Varying Atomic Ratios

For some recipes such as TiN, there are two loops in the recipe. The outermost loop controls the total thickness of the film, the inner loop controls the ratio between the two elements. Contact the superviosr for more detailed info.

Oxford FlexAL Chamber #1: Metals

Maximum 30nm deposition thickness! (ask Tool Supervisor if needed.)

Al₂O₃ deposition (ALD CHAMBER 1)

• Recipe name: CH3-TMA+H2O-300C ("Thermal")
  • 300°C Dep., Thermal Water reaction
  • This is considered the standard recipe for ALD
  • Al₂O₃ deposition rate ~ 1.265 A/cyc
  • Recipe variations: TBD

Pt deposition (ALD CHAMBER 1)

• Recipe name: Ch1_TMCpPt+O3-300C
  • Pt deposition rate ~ 0.5-0.6 A/cyc
  • Conductivity data: (to be added)
  • recipe utilizes the ozone generator which must be first set to the following conditions:
    • O₂ flow = 250sccm
    • O₃ concentration = 15 wt%
  • 300°C deposition
• Recipe name: CH1-TMCpPt+250W/O*-300C
  • Uses Oxygen plasma
  • 300°C deposition

Ru deposition (ALD CHAMBER 1)

• Recipe name: Ch1_Ex03Ru[HPbub]+O2-300C
• Ru deposition rate ~ 0.6-0.7A/cyc.
• Conductivity data: (to be added)
• 300°C, O2 gas reaction

SiO₂ deposition (ALD CHAMBER 1)

• Recipe name: CH3-TDMAS+250W/O*-300C ("Plasma")
  • SiO₂ deposition rate ~ 0.7-0.8A/cyc
  • Recipe utilizes an O* plasma @ 250W, 5mTorr pressure, 300°C Temp.
  • Temperature variations: 300*C (std.), 250°C, 200°C, 120°C
• Recipe name: CH1-BDEAS-O*/300W-300C
  • SiO₂ deposition rate ~ 1.008 A/cyc
  • Similar to above TDMAS recipes, with different precursor gas.
  • Temperature variations: To Be Added
  • Etch rate (BHF:DI=1:100)~7.46nm/min

ZnO Deposition (ALD Chamber 1)

Conductive film.

• Recipe name: Ch1_DEZ+H2O-200C
• ZnO deposition rate ≈ 1.6 A/cycle
• resistivity ≈ TBA
• 200°C Deposition, Water reaction

ZnO:Al deposition (ALD CHAMBER 1)

Al-Doped ZnO for variable resisitivity.

• Recipe name: Ch1_DEZ/TMA+H2O-200C
  • The recipe has TWO loops. The Outer loop determines final thickness. The Inner loop determines how much AlOx is doped into the film. Note that each full (outer-loop) cycle takes a long time due to this double-loop structure.
• Al dose fraction = 5% for lowest resistivity
• ZnO deposition rate ~ 1.7A/cyc
• resistivity ~ 4200uOhm.cm (390A film)

Oxford FlexAL Chamber #3: Dielectrics

Maximum 30nm deposition thickness! (ask Tool Supervisor if needed.)

Al₂O₃ deposition (ALD CHAMBER 3)

• Recipe name: CH3-TMA+H2O-300C ("Thermal")
  • 300°C Dep., Thermal Water reaction
  • This is considered the standard recipe for ALD
  • Al₂O₃ deposition rate ~ 1.192 A/cyc
• Recipe name: CH3-TMA+H2O-250C ("Thermal")
  • Al₂O₃ deposition rate ~ 1.214 A/cyc
• Recipe name: CH3-TMA+H2O-200C ("Thermal")
  • Al₂O₃ deposition rate ~ 1.283 A/cyc
  • Temperature variations: 300°C (std.), 250°C, 200°C, 150°C, 120°C
• Recipe Name: CH3-TMA+250W/O*-300C ("Plasma")
  • Oxygen Plasma reaction instead of H2O
  • Lower carbon content
  • Approx. 1.5–2x faster deposition rate than thermal.
  • Temperature variations: 300°C (std.), 200°C, 120°C
• Recipe Name: CH3-TMA+O3/200mT-300C ("Ozone")
  • Similar dep. rate
  • Ozone (O₃) reactant, experimental
  • Requires Ozone generator to be turned on - ask supervisor

AlN deposition (ALD CHAMBER 3)

• Recipe name: CH3-TMA+100W/N*-300C
  • AlN deposition rate ~ t.b.d.
  • Recipe utilizes a N* plasma @ 100W, 20mTorr pressure.
  • Temperature Variations: 300°C Dep. (std.), 200*C, 120°C
  • Power variations: 300W, 400W (at 300°C)
  • Nitrogen/Hydrogen variations: "30N*/30H*" at 200*C and 300°C

HfO₂ deposition (ALD CHAMBER 3)

• Recipe name: CH3-TEMAH+H2O-300C ("Thermal")
  • HfO₂ deposition rate ~ 0.9-1.0A/cyc
  • Note: deposition shows significant parasitic growth (via CVD channel) if H₂O purge/pump times are not sufficient.
  • Temperature variations: 300°C (std.), 250°C, 200°C, 150°C, 120°C
• Recipe name: CH3-TEMAH+250W/O*-300C ("Plasma")
  • Uses Oxygen plasma reactant instead of H₂O
• Recipe name: CH3-TEMAH+O3/100mT-300C ("Ozone")
  • Uses Ozone (O₃) for reactant instead of H₂O
  • Requires Ozone generator to be turned on - ask supervisor

SiO₂ deposition (ALD CHAMBER 3)

• Recipe name: CH3-TDMAS+250W/O*-300C ("Plasma")
  • SiO₂ deposition rate ~ 0.7-0.8A/cyc
  • Recipe utilizes an O* plasma @ 250W, 5mTorr pressure, 300°C Temp.
  • Temperature variations: 300°C (std.), 250°C, 230°C, 220°C, 200°C, 175°C, 150°C, 120°C
• Recipe name: CH3-TDMAS+O3/200mT-300C ("Ozone")
  • Uses Ozone (O₃) for reactant instead of H₂O
  • Requires Ozone generator to be turned on - ask supervisor

ZrO₂ deposition (ALD CHAMBER 3)

• Recipe name: CH3-TEMAZ+H2O-300C ("Thermal")
  • ZrO₂ deposition rate ~ 0.9-1.0A/cyc
  • Not directly characterized since results are basically the same as the HfO₂ process above.
  • Temperature variations: 300°C (std.), 200°C
• Recipe name: CH3-TEMAZ+250W/O*-300C ("Plasma")
  • Uses Oxygen plasma reactant instead of H₂O
• Recipe name: CH3-TEMAZ+O3/100mT-300C ("Ozone")
  • Uses Ozone (O₃) for reactant instead of H₂O
  • Requires Ozone generator to be turned on - ask supervisor

TiO₂ deposition (ALD CHAMBER 3)

• Recipe name: CH3-TDMAT+H2O-300C ("Thermal")
  • TiO₂ deposition rate ~ 0.6A/cyc
  • Note: deposition shows parasitic growth (via CVD channel) if H₂O purge/pump times are not sufficient.
  • Temperature variations: 300°C (std.), 200°C, 120*C
• Recipe name: CH3-TDMAT+250W/O*-300C ("Plasma")
  • Uses Oxygen plasma reactant instead of H₂O

TiN deposition (ALD CHAMBER 3)

• Recipe name: CH3-TDMAT+400W/12N*/4H*-300C
  • TiN deposition rate ~ 0.7A/cyc
  • Conductivity data: (to be added)
  • Uses Plasma of N2 & H2 gases.
  • Temperatures: 300°C (std.), 200°C
• Recipe name: CH3-TDMAT+100W/N*-300C
  • Uses Plasma of N2 only
  • Temperatures: 300°C (std.), 200°C
• Recipe name: CH3-TDMAT+100W/NH3*-300C
  • Uses Plasma of NH₃ only
  • Temperatures: 300°C (std.), 200°C

Historical Data (ALD Chamber 3)

• 2021 ALD Al2O3 (H2O, 300°C) Historical Data