PECVD 2 (Advanced Vacuum)

PECVD 2 (Advanced Vacuum) Location Bay 2 Tool Type Vacuum Deposition Manufacturer Plasma-Therm Description Vision 310 Advanced Vacuum PECVD Primary Supervisor Michael Barreraz (805) 893-4147 mikebarreraz@ece.ucsb.edu Secondary Supervisor Don Freeborn Recipes Vacuum Deposition Recipes SignupMonkey: Sign up for this tool

About

• Films/Gases: This open-load system is dedicated to PECVD of SiO₂, SiN_x, SiO_xN_y, and a-Si using Silane (2%SiH₄, 98% He), N₂O, NH₃, and N₂ gases.
• Size: The sample electrode has a 270mm diameter useable area, allowing for multiple 4” wafer depositions in a single run.
• Temperature: Standard operating temperature is 300C, but can be user changed for temps ranging anywhere from 250 to 350C.
• Low-Stress Si₃N₄: The system is equipped with a dual generator, dual frequency option for growth of Low-stress Nitride films.
  • These films alternate between thin (<10nm) compressive and tensile layers.
  • The Low-Stress Si3N4 film recipe are tested approx. monthly, and kept within ±100MPa. Data can be found at Recipes (below) > Low-Stress Nitride.

See Also

• Vision 310 Product Page

Documentation

• Operating Instructions
• Modifying Deposition Time in "STD LS-Si3N4v4" Recipe
• Modifying Deposition Temperature
• Wafer Coating Process Traveler
• For particle counting method, see the Surfscan Scanning Procedure

Recipes & Historical Data

• Recipes can be found on the PECVD Recipes Page:
  • Recipes > Vacuum Deposition Recipes > PECVD Recipes > PECVD 2 - Advanced Vacuum
  • Thin-Films recorded: SiO2, Si3N4 and Low-Stress Si3N4

• A list of all available deposited films can be found on the Vacuum Deposition Recipes page:
  • Recipes > Vacuum Deposition Recipes

Process Control Data

• PECVD#2: Plots of all data
• PECVD#2: SiO₂
• PECVD#2: Si₃N₄
• PECVD#2: Low-Stress Si₃N₄
  • Plots of Low-Stress Si₃N₄ Data