PECVD Recipes: Difference between revisions
Jump to navigation
Jump to search
Line 86: | Line 86: | ||
|-align=left |
|-align=left |
||
| |
| |
||
*[[Media:PECVD2-SiN-Recipe- |
*[[Media:PECVD2-SiN-Recipe-Low stress SiNx-100%SiH4-120W-50C.pdf|SiN Deposition Recipe (120W 50° Low Stress)]] |
||
| |
| |
||
*[[Media:PECVD2-SiN-Recipe-NoAr-ExtraN2-120W-100C-Low-Stress.pdf|SiN Deposition Recipe - No Ar Extra N<sub>2</sub> (120W 100° Low Stress)]] |
*[[Media:PECVD2-SiN-Recipe-NoAr-ExtraN2-120W-100C-Low-Stress.pdf|SiN Deposition Recipe - No Ar Extra N<sub>2</sub> (120W 100° Low Stress)]] |
Revision as of 18:52, 3 October 2012
Back to Vacuum Deposition Recipes.
PECVD 1 (PlasmaTherm 790)
SiN deposition (PECVD #1)
SiO2 deposition (PECVD #1)
PECVD 2 (Advanced Vacuum)
SiN deposition (PECVD #2)
SiO2 deposition (PECVD #2)
ICP-PECVD (Unaxis VLR)
SiN deposition (Unaxis VLR)
SiN (2% SiH4)
50° | 100° | 250° |
---|---|---|
SiN (2% SiH4 - No-Ar)
50° | 100° | 250° |
---|---|---|
SiN (2% SiH4 - No-Ar - Extra N2)
50° | 100° | 250° |
---|---|---|
SiN (100% SiH4 )
50° | 100° | 250° |
---|---|---|
SiO2 deposition (Unaxis VLR)
SiO2 (2% SiH4)
50° | 100° | 250° |
---|---|---|
SiO2 (2% SiH4 - No Ar)
50° | 100° | 250° |
---|---|---|
SiO2 (100% SiH4 HDR)
50° | 100° | 250° |
---|---|---|
SiO2 (100% SiH4 LDR)
50° | 100° | 250° |
---|---|---|