PECVD Recipes: Difference between revisions
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=== SiN (2% SiH<sub>4</sub> - No-Ar - Extra N<sub>2</sub>) === |
=== SiN (2% SiH<sub>4</sub> - No-Ar - Extra N<sub>2</sub>) === |
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Revision as of 19:08, 3 October 2012
Back to Vacuum Deposition Recipes.
PECVD 1 (PlasmaTherm 790)
SiN deposition (PECVD #1)
SiO2 deposition (PECVD #1)
PECVD 2 (Advanced Vacuum)
SiN deposition (PECVD #2)
SiO2 deposition (PECVD #2)
ICP-PECVD (Unaxis VLR)
SiN deposition (Unaxis VLR)
SiN (2% SiH4)
| 50° | 100° | 250° |
|---|---|---|
SiN (2% SiH4 - No-Ar)
| 50° | 100° | 250° |
|---|---|---|
SiN (2% SiH4 - No-Ar - Extra N2)
| 50° | 100° | 250° |
|---|---|---|
SiN (100% SiH4 )
| 50° | 100° | 250° |
|---|---|---|
SiO2 deposition (Unaxis VLR)
SiO2 (2% SiH4)
| 50° | 100° | 250° |
|---|---|---|
SiO2 (2% SiH4 - No Ar)
| 50° | 100° | 250° |
|---|---|---|
SiO2 (100% SiH4 HDR)
| 50° | 100° | 250° |
|---|---|---|
SiO2 (100% SiH4 LDR)
| 50° | 100° | 250° |
|---|---|---|