ICP Etching Recipes: Difference between revisions
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*[[media:07-GaN_Etch-Panasonic-ICP-1.pdf|GaN Etch Recipes Cl<sub>2</sub>N<sub>2</sub>]] |
*[[media:07-GaN_Etch-Panasonic-ICP-1.pdf|GaN Etch Recipes Cl<sub>2</sub>N<sub>2</sub>]] |
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*[[media:Panasonic1-GaN-AlGaN-Selective-Etch-Plasma-RIE-ICP-RevA.pdf|GaN Selective Etch over AlGaN Recipes BCl<sub>3</sub>-SF<sub>6</sub>]] |
*[[media:Panasonic1-GaN-AlGaN-Selective-Etch-Plasma-RIE-ICP-RevA.pdf|GaN Selective Etch over AlGaN Recipes BCl<sub>3</sub>-SF<sub>6</sub>]] |
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==Sapphire Etch (Panasonic 1)== |
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*[[media:Panasonic1-sapphire-etch-RIE-Plasma-BCl3-ICP-RevA.pdf|Sapphire Etch Recipes Ni and PR Mask - BCl<sub>3</sub>-Cl<sub>2</sub>]] |
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=[[ICP Etch 2 (Panasonic E640)]]= |
=[[ICP Etch 2 (Panasonic E640)]]= |
Revision as of 22:25, 24 October 2013
Back to Dry Etching Recipes.
Si Deep RIE (PlasmaTherm/Bosch Etch)
Single-step Si Etching (not Bosch Process!) (Si Deep RIE)
ICP Etch 1 (Panasonic E626I)
SiO2 Etching (Panasonic 1)
SiNx Etching (Panasonic 1)
Al Etch (Panasonic 1)
Cr Etch (Panasonic 1)
Ti Etch (Panasonic 1)
W-TiW Etch (Panasonic 1)
GaAs-AlGaAs Etch (Panasonic 1)
- GaAs-Nanoscale Etch Recipe - PR mask - Cl2-BCl3-Ar
- AlGaAs Etch Recipes - Cl2N2
- GaAs DRIE via Etch Recipes - Cl2-BCl3-Ar PR passivation
GaN Etch (Panasonic 1)
Sapphire Etch (Panasonic 1)
ICP Etch 2 (Panasonic E640)
SiO2 Etching (Panasonic 2)
SiNx Etching (Panasonic 2)
Al Etch (Panasonic 2)
GaAs Etch (Panasonic 2)
ICP-Etch (Unaxis VLR)
GaAs-AlGaAs Etch (Unaxis VLR)
InP-InGaAs-InAlAs Etch (Unaxis VLR)
- InP Etch Recipe (Cl2N2Ar 200C)
- InP-based Material Etch Profile (Cl2N2Ar200C)
- Unaxis InP Etch Recipe (Cl2H2 Ar 200C) Parameters
- InP-InGaAs Etch Profile (Cl2H2 Ar 200C)