ICP Etching Recipes: Difference between revisions

From UCSB Nanofab Wiki
Jump to navigation Jump to search
Line 38: Line 38:
==Sapphire Etch (Panasonic 1)==
==Sapphire Etch (Panasonic 1)==
*[[media:Panasonic1-sapphire-etch-RIE-Plasma-BCl3-ICP-RevA.pdf|Sapphire Etch Recipes Ni and PR Mask - BCl<sub>3</sub>-Cl<sub>2</sub>]]
*[[media:Panasonic1-sapphire-etch-RIE-Plasma-BCl3-ICP-RevA.pdf|Sapphire Etch Recipes Ni and PR Mask - BCl<sub>3</sub>-Cl<sub>2</sub>]]

Recipes starting points for materials without processes listed can be obtained from Panasonic1 recipe files. The chambers are slightly different, but essentially the same, requiring only small program changes to obtain similar results.


=[[ICP Etch 2 (Panasonic E640)]]=
=[[ICP Etch 2 (Panasonic E640)]]=

Revision as of 23:42, 24 October 2013

Back to Dry Etching Recipes.

Si Deep RIE (PlasmaTherm/Bosch Etch)

Single-step Si Etching (not Bosch Process!) (Si Deep RIE)

ICP Etch 1 (Panasonic E626I)

SiO2 Etching (Panasonic 1)

SiNx Etching (Panasonic 1)

Al Etch (Panasonic 1)

Cr Etch (Panasonic 1)

Ti Etch (Panasonic 1)

W-TiW Etch (Panasonic 1)

GaAs-AlGaAs Etch (Panasonic 1)

GaN Etch (Panasonic 1)

SiC Etch (Panasonic 1)

Sapphire Etch (Panasonic 1)

ICP Etch 2 (Panasonic E640)

SiO2 Etching (Panasonic 2)

SiNx Etching (Panasonic 2)

Al Etch (Panasonic 2)

GaAs Etch (Panasonic 2)

ICP-Etch (Unaxis VLR)

GaAs-AlGaAs Etch (Unaxis VLR)

InP-InGaAs-InAlAs Etch (Unaxis VLR)

GaN Etch (Unaxis VLR)