ICP Etching Recipes: Difference between revisions
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==Sapphire Etch (Panasonic 1)== |
==Sapphire Etch (Panasonic 1)== |
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*[[media:Panasonic1-sapphire-etch-RIE-Plasma-BCl3-ICP-RevA.pdf|Sapphire Etch Recipes Ni and PR Mask - BCl<sub>3</sub>-Cl<sub>2</sub>]] |
*[[media:Panasonic1-sapphire-etch-RIE-Plasma-BCl3-ICP-RevA.pdf|Sapphire Etch Recipes Ni and PR Mask - BCl<sub>3</sub>-Cl<sub>2</sub>]] |
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Recipes starting points for materials without processes listed can be obtained from Panasonic1 recipe files. The chambers are slightly different, but essentially the same, requiring only small program changes to obtain similar results. |
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=[[ICP Etch 2 (Panasonic E640)]]= |
=[[ICP Etch 2 (Panasonic E640)]]= |
Revision as of 23:42, 24 October 2013
Back to Dry Etching Recipes.
Si Deep RIE (PlasmaTherm/Bosch Etch)
Single-step Si Etching (not Bosch Process!) (Si Deep RIE)
ICP Etch 1 (Panasonic E626I)
SiO2 Etching (Panasonic 1)
SiNx Etching (Panasonic 1)
Al Etch (Panasonic 1)
Cr Etch (Panasonic 1)
Ti Etch (Panasonic 1)
W-TiW Etch (Panasonic 1)
GaAs-AlGaAs Etch (Panasonic 1)
- GaAs-Nanoscale Etch Recipe - PR mask - Cl2-BCl3-Ar
- AlGaAs Etch Recipes - Cl2N2
- GaAs DRIE via Etch Recipes - Cl2-BCl3-Ar PR passivation
GaN Etch (Panasonic 1)
SiC Etch (Panasonic 1)
Sapphire Etch (Panasonic 1)
ICP Etch 2 (Panasonic E640)
SiO2 Etching (Panasonic 2)
SiNx Etching (Panasonic 2)
Al Etch (Panasonic 2)
GaAs Etch (Panasonic 2)
ICP-Etch (Unaxis VLR)
GaAs-AlGaAs Etch (Unaxis VLR)
InP-InGaAs-InAlAs Etch (Unaxis VLR)
- InP Etch Recipe (Cl2N2Ar 200C)
- InP-based Material Etch Profile (Cl2N2Ar200C)
- Unaxis InP Etch Recipe (Cl2H2 Ar 200C) Parameters
- InP-InGaAs Etch Profile (Cl2H2 Ar 200C)