PECVD Recipes: Difference between revisions
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== SiN deposition (PECVD #1) == |
== SiN deposition (PECVD #1) == |
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*[[media:PECVD1-SiN-Recipe.pdf|SiN Deposition Recipe]] |
*[[media:PECVD1-SiN-Recipe.pdf|SiN Deposition Recipe]] |
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*[[media: |
*[[media:PECVD SIN data-February 2014 SiN Index,dep.rates,stress.pdf| SIN data]] |
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* [[media:PECVD1-SiON-Recipe.pdf|Low Stress Si<sub>3</sub>N<sub>4</sub> - Variable Stress Recipes]] |
* [[media:PECVD1-SiON-Recipe.pdf|Low Stress Si<sub>3</sub>N<sub>4</sub> - Variable Stress Recipes]] |
Revision as of 23:55, 12 March 2014
Back to Vacuum Deposition Recipes.
PECVD 1 (PlasmaTherm 790)
SiN deposition (PECVD #1)
- SiN Deposition Recipe
- SIN data
- Low Stress Si3N4 - Variable Stress Recipes
- Low Stress Si3N4 - Variable Stress Plot
SiO2 deposition (PECVD #1)
SiOxNy deposition (PECVD #1)
PECVD 2 (Advanced Vacuum)
SiN deposition (PECVD #2)
SiO2 deposition (PECVD #2)
Amorphous-Si deposition (PECVD #2)
ICP-PECVD (Unaxis VLR)
SiN deposition (Unaxis VLR)
SiN (2% SiH4)
SiN (2% SiH4 - No-Ar)
50° | 100° | 250° |
---|---|---|
SiN (2% SiH4 - No-Ar - Extra N2)
50° | 100° | 250° |
---|---|---|
SiN (100% SiH4 )
50° | 100° | 250° |
---|---|---|
SiO2 deposition (Unaxis VLR)
SiO2 (2% SiH4)
50° | 100° | 250° |
---|---|---|
SiO2 (2% SiH4 - No Ar)
50° | 100° | 250° |
---|---|---|
SiO2 (100% SiH4 HDR)
50° | 100° | 250° |
---|---|---|
SiO2 (100% SiH4 LDR)
50° | 100° | 250° |
---|---|---|
Amorphous Si (100%SiH4 Ar He)
90° | 250° |
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