OLD - PECVD2 Recipes: Difference between revisions
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*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dDRjSHEtYUZRUTg4azE2U0JGUTg2M1E#gid=sharing Oxide Thickness uniformity 2014] |
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dDRjSHEtYUZRUTg4azE2U0JGUTg2M1E#gid=sharing Oxide Thickness uniformity 2014] |
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*Deposition Rate: ≈ 28. |
*Deposition Rate: ≈ 28.36 nm/min |
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*Refractive Index: ≈ 1. |
*Refractive Index: ≈ 1.473 |
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*Stress ≈ - |
*Stress ≈ -256MPa |
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*HF etch rate~582nm/min |
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==LS SiN deposition (PECVD #2) == |
==LS SiN deposition (PECVD #2) == |
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Revision as of 01:41, 22 May 2014
PECVD 2 (Advanced Vacuum)
SiN deposition (PECVD #2)
- Deposition Rate: ≈ 8.29 nm/min
- Refractive Index: ≈ 1.955
- Stress ≈ 498MPa
- HF etch rate:~48nm/min
SiO2 deposition (PECVD #2)
- Oxide Standard Recipe
- Oxide Data (Deposition Rate, Refractive Index, Stress, HF etch rate )
- Oxide Data April 2014
- Oxide Thickness uniformity 2014
- Deposition Rate: ≈ 28.36 nm/min
- Refractive Index: ≈ 1.473
- Stress ≈ -256MPa
- HF etch rate~582nm/min
LS SiN deposition (PECVD #2)
- LS Nitride2 Standard Recipe
- LS Nitride2 Data (Deposition Rate, Refractive Index, Stress, HF etch rate )
- LS Nitride2 Data April 2014
- Deposition Rate: ≈ 8.34 nm/min
- Refractive Index: ≈ 1.932
- Stress ≈ -46MPa