OLD - PECVD2 Recipes: Difference between revisions
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*[[media:AdvPECVD-LS Nitride2 300C standard recipe.pdf|LS Nitride2 Standard Recipe]] |
*[[media:AdvPECVD-LS Nitride2 300C standard recipe.pdf|LS Nitride2 Standard Recipe]] |
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*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEZvWVhzS1pHUXZkOGcyQWZ4LTNBWGc&usp=drive_web#gid=sharing LS Nitride2 Data |
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEZvWVhzS1pHUXZkOGcyQWZ4LTNBWGc&usp=drive_web#gid=sharing LS Nitride2 Data May 2014] |
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*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dENSak1ZNnVaVTFEQTBzdDJMSDlDTFE&usp=drive_web#gid=1=sharing LS Nitride2 Thickness uniformity 2014] |
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dENSak1ZNnVaVTFEQTBzdDJMSDlDTFE&usp=drive_web#gid=1=sharing LS Nitride2 Thickness uniformity 2014] |
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Revision as of 01:45, 22 May 2014
PECVD 2 (Advanced Vacuum)
SiN deposition (PECVD #2)
- Deposition Rate: ≈ 8.29 nm/min
- Refractive Index: ≈ 1.955
- Stress ≈ 498MPa
- HF etch rate:~48nm/min
SiO2 deposition (PECVD #2)
- Deposition Rate: ≈ 28.36 nm/min
- Refractive Index: ≈ 1.473
- Stress ≈ -256MPa
- HF etch rate~582nm/min
LS SiN deposition (PECVD #2)
- Deposition Rate: ≈ 8.17 nm/min
- Refractive Index: ≈ 1.935
- Stress ≈ -0.04MPa
- HF etch rate~47nm/min