PECVD1 Recipes: Difference between revisions
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* [[media:PECVD1-SiON-Recipe.pdf|Low Stress Si<sub>3</sub>N<sub>4</sub> - Variable Stress Plot]] |
* [[media:PECVD1-SiON-Recipe.pdf|Low Stress Si<sub>3</sub>N<sub>4</sub> - Variable Stress Plot]] |
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* |
*Deposition rate~11.21nm/min |
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* |
*HF e.r.~87nm/min |
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*Stress~476MPa |
*Stress~476MPa |
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*Index~1.936 |
*Refractive Index~1.936 |
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== SiO<sub>2</sub> deposition (PECVD #1) == |
== SiO<sub>2</sub> deposition (PECVD #1) == |
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Revision as of 01:50, 22 May 2014
PECVD 1 (PlasmaTherm 790)
SiN deposition (PECVD #1)
- SiN Standard Recipe
- SiN Data April 2014
- SiN 1000A Thickness uniformity 2014
- Low Stress Si3N4 - Variable Stress Recipes
- Low Stress Si3N4 - Variable Stress Plot
- Deposition rate~11.21nm/min
- HF e.r.~87nm/min
- Stress~476MPa
- Refractive Index~1.936
SiO2 deposition (PECVD #1)
- SiO2 Standard Recipe
- SiO2 Data (Deposition rate, Refractive Index, Stress, HF etch rate)
- SiO2 Data April 2014
- SiO2 1000A Thickness uniformity 2014