PECVD1 Recipes: Difference between revisions
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*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEttR2JSTkRoamR0SUZ4bE5QUW9uS2c&usp=sharing SiO<sub>2</sub> 1000A Thickness uniformity 2014] |
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEttR2JSTkRoamR0SUZ4bE5QUW9uS2c&usp=sharing SiO<sub>2</sub> 1000A Thickness uniformity 2014] |
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*Deposition rate~35.73nm/min |
*Deposition rate~35.73nm/min (users must calibrate this prior to critical deps) |
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*HF e.r.~610nm/min |
*HF e.r.~610nm/min |
||
*Stress~-402MPa |
*Stress~-402MPa |
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Revision as of 02:01, 22 May 2014
PECVD 1 (PlasmaTherm 790)
SiN deposition (PECVD #1)
- SiN Standard Recipe
- SiN Data May 2014
- SiN 1000A Thickness uniformity 2014
- Low Stress Si3N4 - Variable Stress Recipes
- Low Stress Si3N4 - Variable Stress Plot
- Deposition rate~11.21nm/min (users must calibrate this prior to critical deps)
- HF e.r.~87nm/min
- Stress~476MPa
- Refractive Index~1.936
SiO2 deposition (PECVD #1)
- Deposition rate~35.73nm/min (users must calibrate this prior to critical deps)
- HF e.r.~610nm/min
- Stress~-402MPa
- Refractive Index~1.460