OLD - PECVD2 Recipes: Difference between revisions
Jump to navigation
Jump to search
| Line 2: | Line 2: | ||
== SiN deposition (PECVD #2) == |
== SiN deposition (PECVD #2) == |
||
*[[media:New Advanced PECVD-Nitride2 300C standard recipe.pdf|Nitride2 Standard Recipe]] |
*[[media:New Advanced PECVD-Nitride2 300C standard recipe.pdf|Nitride2 Standard Recipe]] |
||
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dDE0R3FlenNPa2txNmRldTczMXZNNnc#gid=sharing Nitride2 Data |
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dDE0R3FlenNPa2txNmRldTczMXZNNnc#gid=sharing Nitride2 Data August 2014] |
||
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dERkYm85bGtYQVpjVk5GTGJuMkg2anc&usp=drive_web#gid=sharing Nitride2 Thickness uniformity 2014] |
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dERkYm85bGtYQVpjVk5GTGJuMkg2anc&usp=drive_web#gid=sharing Nitride2 Thickness uniformity 2014] |
||
Revision as of 22:29, 15 August 2014
PECVD 2 (Advanced Vacuum)
SiN deposition (PECVD #2)
- Deposition Rate: ≈ 8.17 nm/min (users must calibrate this prior to critical deps)
- Refractive Index: ≈ 1.957
- Stress ≈ 499MPa
- HF etch rate:~49nm/min
SiO2 deposition (PECVD #2)
- Deposition Rate: ≈ 28.50 nm/min (users must calibrate this prior to critical deps)
- Refractive Index: ≈ 1.474
- Stress ≈ -252MPa
- HF etch rate~616nm/min
LS SiN deposition (PECVD #2)
- Deposition Rate: ≈ 8.14 nm/min (users must calibrate this prior to critical deps)
- Refractive Index: ≈ 1.935
- Stress ≈ -7.18MPa
- HF etch rate~48nm/min