PECVD1 Recipes

PECVD 1 (PlasmaTherm 790)

SiN deposition (PECVD #1)

• SiN Standard Recipe
• SiN Data September 2014
• SiN 1000A Thickness uniformity 2014
• Low Stress Si₃N₄ - Variable Stress Recipes
• Low Stress Si₃N₄ - Variable Stress Plot

• Deposition rate~11.30nm/min (users must calibrate this prior to critical deps)
• HF e.r.~90nm/min
• Stress~444MPa
• Refractive Index~1.940

SiO₂ deposition (PECVD #1)

• SiO₂ Standard Recipe
• SiO₂ Data September 2014
• SiO₂ 1000A Thickness uniformity 2014

• Deposition rate~35.22nm/min (users must calibrate this prior to critical deps)
• HF e.r.~646nm/min
• Stress~-407MPa
• Refractive Index~1.460

SiO_xN_y deposition (PECVD #1)

• SiO_xN_y Deposition Recipes - Varying N/O Ratio
• SiO_xN_y Stress/Index vs. O/N Ratio

• [[media:|SiO_xN_y Standard Recipe]]

• {https://docs.google.com/spreadsheets/d/1rixyzAAq6q08M5OwvZiDVoh3K8B566XKM-UZAQIAnsg/edit#gid=sharing SiO_xN_y Data September 2014]
• SiO_xN_y Data September 2014
• SiO_xN_y 3000A Thickness uniformity 2014

• Deposition rate~14.50nm/min (users must calibrate this prior to critical deps)
• HF e.r.~399nm/min
• Stress~145MPa
• Refractive Index~1.714