Sputtering Recipes
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Back to Vacuum Deposition Recipes. R1
Sputter 2 (SFI Endeavor)
Al Deposition (Sputter 2)
AlNx Deposition (Sputter 2)
Au Deposition (Sputter 2)
TiO2 Deposition (Sputter 2)
Sputter 3 (AJA ATC 2000-F)
The recipes below are given as starting points from data obtained in the nanofab. For critical depositions, calibrations are recommended.
Material | P(mT) | Pow(W) | Sub(W) | T(C) | Ar | N2 | O2 | Height-Tilt | Rate(nm/min) | Stress(MPa) | Rs(uOhm-cm) | n@633nm | k@633nm | Data Below | Comment |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Si | 8 | 250 | 0 | 25 | 25 | 0 | 0 | 15-3 | 1.4 | - | - | - | - | no | Gerhard - ramp 2W/s - 3% Unif 4" wafer |
SiO2 | 3 | 200 | 10 | 20 | 25 | 0 | 3 | 25-9 | 3.68 | - | - | 1.447 | - | yes | Brian |
SiO2 | 3 | 250 | 10 | 20 | 25 | 0 | 2.5 | 25-9 | 4.3 | - | - | 1.485 | - | yes | Brian |
SiO2 | 3 | 200 | 10 | 20 | 25 | 0 | 5 | 45-3 | 2.60 | - | - | 1.471 | - | yes | Brian |
SiN | 3 | 200 | 10 | 20 | 25 | 3 | 0 | 25-9 | 1.56 | - | - | 1.992 | - | yes | Brian |
SiN | 3 | 250 | 10 | 20 | 25 | 2.5 | 0 | 25-9 | 2.1 | - | - | 2.06 | - | yes | Brian |
Co | 10(5) | 200 | 0 | 20 | 25 | 0 | 0 | 25-9 | 2.3 | - | - | - | - | yes | Alex K |
Cr | 5 | 200 | 0 | 20 | 25 | 0 | 0 | 44-4 | 6.84 | - | - | - | - | no | Brian |
Cu | 1.5 | 50(395v) | 0 | 20 | 25 | 0 | 0 | 25-9 | 4.15 | - | - | - | - | no | Ning |
Fe | 10(5) | 200 | 0 | 20 | 25 | 0 | 0 | 25-9 | 1.25 | - | - | - | - | No | Alex K |
Mo | 3 | 200 | 0 | 20 | 25 | 0 | 0 | 44-4 | 13.15 | - | - | - | - | yes | Ning |
Ni | 5 | 150 | 0 | 20 | 25 | 0 | 0 | 44-4 | 5.23 | - | - | - | - | yes | Ning |
Ni | 5 | 150 | 0 | 20 | 25 | 0 | 0 | 25-9 | 1.82 | - | - | - | - | yes | Ning |
Ni | 5 | 75 | 0 | 20 | 25 | 0 | 0 | 44-4 | 2.50 | - | - | - | - | yes | Ning |
Ni | 3 | 200 | 0 | 20 | 25 | 0 | 0 | 44-4 | 9.4 | - | - | - | - | yes | Ning |
Ni | 1.5 | 50(399v) | 0 | 20 | 25 | 0 | 0 | 25-9 | 0.96 | - | - | - | - | no | Ning |
Pt | 3 | 50 | 0 | 20 | 25 | 0 | 0 | 25-9 | 4.1 | - | - | - | - | no | Ning |
Ta | 5 | 150 | 0 | 20 | 25 | 0 | 0 | 44-4 | 9.47 | - | - | - | - | yes | Ning |
Ta | 5 | 75 | 0 | 20 | 25 | 0 | 0 | 44-4 | 5.03 | - | - | - | - | yes | Ning |
Ti | 3 | 100 | 0 | 20 | 25 | 0 | 0 | 25-9 | 1.34 | - | - | - | - | yes | Ning |
SampleClean-NativeSiO2 | 10 | 0 | 18 | 20 | 25 | 0 | 0 | 44-4 | - | - | - | - | - | yes | 150Volts 5 min |
Fe and Co Deposition (Sputter 3)
Mo Deposition (Sputter 3)
Ni and Ta Deposition (Sputter 3)
SiO2 Deposition (Sputter 3)
SiN Deposition (Sputter 3)
Ti Deposition (Sputter 3)
Sputter 4 (AJA ATC 2200-V)
The recipes below are given as starting points from data obtained in the nanofab. For critical depositions, calibrations are recommended.
Material | P(mT) | Pow(W) | Sub(W) | T(C) | Ar | N2 | O2 | Height-Tilt | Rate(nm/min) | Stress(MPa) | Rs(uOhm-cm) | n@633nm | k@633nm | Data Below | Comment |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
W | 3 | 300 | 0 | 50 | 45 | 0 | 0 | H2.75-T5 | 11.5 | -150 to 150 | 11 | - | - | Yes | Jeremy Watcher |
TiW | 4.5 | 200 | 0 | 20 | 45 | 0 | 0 | H1-T10 | 4.7 | - | - | - | - | Yes | Ning Cao |
TiW | 4.5 | 300 | 0 | 75 | 45 | 0 | 0 | H2.75-T5 | 9.5 | -150 to 150 | 60 | - | - | Yes | 10%Ti by Wt |
TiN | 3 | 150 | 110V | 20 | 48.25 | 1.75 | 0 | H2.5-T5 | 2 | - | 60 | - | - | No | |
TiO2 | 3 | 250(RF) | 0 | 20 | 45 | 0 | 3 | H2.75-T5 | 4.3 | - | - | - | Yes | Ning Cao (Voltage:485 v) | |
Nb | 4 | 250 | 0 | 20 | 30 | 0 | 0 | H2.00-T7 | 7.5 | - | - | - | - | No | |
Ti | 10 | 200 | 0 | 20 | 45 | 0 | 0 | H2.75-T5 | 2.3 | - | - | - | - | Yes | Ning Cao |
Au | 5 | 200 | 0 | 20 | 45 | 0 | 0 | H1-T10 | 17.7 | - | - | - | - | Yes | Ning Cao |
Au | 10 | 300 | 0 | 20 | 45 | 0 | 0 | H2.75-T5 | 45.4 | - | - | - | - | Yes | Ning Cao |
Al | 5 | 200 | 0 | 20 | 45 | 0 | 0 | H2.75-T5 | 4.4 | - | - | - | - | Yes | Ning Cao |
Pt | 5 | 200 | 0 | 20 | 45 | 0 | 0 | H2.75-T5 | 7.4 | - | - | - | - | Yes | Ning Cao |
Pt | 3 | 50 | 0 | 20 | 45 | 0 | 0 | H2.75-T5 | 3.9 | - | - | - | - | Yes | Ning Cao (Voltage: 439v) |
W-TiW Deposition (Sputter 4)
Ti-Au Deposition (Sputter 4)
Pt Deposition (Sputter 4)
TiW Deposition (Sputter 4)
TiO2 Deposition (Sputter 4)
Au Deposition (Sputter 4)
Al Deposition (Sputter 4)
Sputter 5 (Lesker AXXIS)
The recipes below are given as starting points from data obtained in the nanofab. For critical depositions, calibrations are recommended.
Material | P(mT) | Pow(W) | Sub(V) | T(C) | Ar | N2 | O2 | Height-Tilt | Rate(nm/min) | Stress(MPa) | Rs(uOhm-cm) | Rq(nm) | n@633nm | k@633nm | LPDb/LPDa | Data Below | Comment |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
SiO2 | 3 | 250 | 120 | 20 | 45 | 0 | 2 | H1.0-T10 | 2.32 | - | - | 1.49 | - | 153/6384 | No | Biljana | |
SiO2 | 3 | 250 | 120 | 20 | 45 | 0 | 4.5 | H1.0-T10 | 2.29 | -515 | - | 0.210 | 1.49 | 138/4445 | No ( AFM available) | Biljana | |
SiO2 | 3 | 250 | 120 | 20 | 45 | 0 | 6 | H1.0-T10 | 2.32 | - | - | 1.49 | - | 27/1515 | Yes | Biljana |
- LPD-light particle detection
- LPDb- light particle detection before deposition
- LPDa- light particle detection after deposition
SiO2 Deposition (Sputter 5)
Ion Beam Deposition (Veeco NEXUS)
- IBD Calibrations Spreadsheet - Records of historical film depositions (rates, indices), Uniformity etc.
- Particulates in SiO2 and Ta2O5 in 2015
All users are required to enter their calibration deps (simple test deps only)
SiO2 deposition (IBD)
- SiO2 Standard Recipe
- SiO2 Data December 2014
- SiO2 Thickness uniformity 2014
- SiO2 Data-15min depositions 2015
- SiO2 Thickness uniformity-15 min depositions 2015
- SiO2 Data-1hr depositions 2015
- SiO2 Thickness uniformity-1hr depositions 2015
- SiO2 Data-1hr depositions 2016
- SiO2 Thickness uniformity-1hr depositions 2016
- SiO2 1hr depositions:
- Dep.rate: ≈ 5.2 nm/min (users must calibrate this prior to critical deps)
- HF e.r.~350 nm/min
- Stress ≈ -390MPa (compressive)
- Refractive Index: ≈ 1.494
- [Cauchy Parameters] (350-2000nm):
- A = 1.480
- B = 0.00498
- C = -3.2606e-5
Ta2O5 deposition (IBD)
- Ta2O5 Data December-15 min depositions 2015
- Ta2O5 Thickness uniformity-15 min depositions 2015
- Ta2O5 Data December-1hr depositions 2015
- Ta2O5 Thickness uniformity-1hr depositions 2015
- Ta2O5 Data December-1hr depositions 2016
- Ta2O5 Thickness uniformity-1hr depositions 2016
- Ta2O5 1hr depositions:
- Deposition Rate: ≈ 7.8 nm/min (users must calibrate this prior to critical deps)
- HF e.r.~2 nm/min
- Stress ≈ -232MPa (compressive)
- Refractive Index: ≈ 2.172
- [Cauchy Parameters] (350-2000nm):
- A = 2.1123
- B = 0.018901
- C = -0.016222
Si3N4 deposition (IBD)
- Deposition Rate: ≈ 4.10 nm/min (users must calibrate this prior to critical deps)
- HF e.r.~11nm/min
- Stress ≈ -1590MPa (compressive)
- Refractive Index: ≈ 1.969
- [Cauchy Parameters] (350-2000nm):
- A = 2.000
- B = 0.01974
- C = 1.2478e-4
TiO2 deposition (IBD)
- Deposition Rate: ≈ 1.29 nm/min (users must calibrate this prior to critical deps)
- HF etch rate ~5.34nm/min
- Stress ≈ -445MPa (compressive)
- Refractive Index: ≈ 2.259
- [Cauchy Parameters] (350-2000nm):
- A = 2.435
- B = -4.9045e-4
- C = 0.01309
- Absorbing < ~350nm