PECVD1 Wafer Coating Process

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Revision as of 23:09, 22 April 2020 by Biljana (talk | contribs) (SiN @250C)
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The wafers used for process calibration are ordered from SVM. These are low particle count 4" Si wafers (particle count<100). The wafers are scanned before and after deposition. They are not re-used. Handling the wafers is important and each step could contribute in adding new particles.The section bellow describes how to run standard recipes for SiN a,d SiO2 at 250C.

SiN @250C

  1. Log in to PECVD #1
  2. Seasoning
    • Load the seasoning recipe (SiN seasoning), and run it. The goal of this step is to coat chamber walls and prepare it for deposition.
  3. Deposition
    • Vent the chamber and load the substrate (place it in the center of platen). You can place small pieces around the wafer to protect it from moving.
    • Pump down.
    • Load the deposition recipe (SiN@250C), and run it.
    • Unload the wafer.
  4. Cleaning
    • Wipe sidewall first with DI water, followed by IPA.
    • Load the cleaning recipe (CH4/O2 clean). Edit the recipe and enter required time for cleaning.
    • Log out

SiO2 @250C

  1. Log in to PECVD #1
  2. Seasoning
    • Load the seasoning recipe( SiO2 seasoning), and run it. The goal of this step is to coat chamber walls and prepare it for deposition.
  3. Deposition
    • Vent the chamber and load the substarte (place it in the center of platen). You can place small pieces around the wafer to protect it from moving.
    • Pump down.
    • Load the deposition recipe( SiO2@250C), and run it.
    • Unload the wafer.
  4. Cleaning
    • Wipe sidewall first with DI water, followed by IPA.
    • Load for cleaning recipe (CF4/O2). Edit the recipe and enter required time for cleaning.
    • Log out