PECVD1 Recipes

PECVD 1 (PlasmaTherm 790)

SiN deposition (PECVD #1)

• SiN Standard Recipe
• SiN Data May 2014
• SiN 1000A Thickness uniformity 2014
• Low Stress Si₃N₄ - Variable Stress Recipes
• Low Stress Si₃N₄ - Variable Stress Plot

• Deposition rate~11.21nm/min (users must calibrate this prior to critical deps)
• HF e.r.~87nm/min
• Stress~476MPa
• Refractive Index~1.936

SiO₂ deposition (PECVD #1)

• SiO₂ Standard Recipe
• SiO₂ Data May 2014
• SiO₂ 1000A Thickness uniformity 2014

• Deposition rate~35.73nm/min
• HF e.r.~610nm/min
• Stress~-402MPa
• Refractive Index~1.460

SiO_xN_y deposition (PECVD #1)

• SiO_xN_y Deposition Recipes - Varying N/O Ratio
• SiO_xN_y Stress/Index vs. O/N Ratio