OLD - PECVD2 Recipes

PECVD 2 (Advanced Vacuum)

SiN deposition (PECVD #2)

• Nitride2 Standard Recipe
• Nitride2 Data September 2014
• Nitride2 Thickness uniformity 2014

• Deposition Rate: ≈ 8.17 nm/min (users must calibrate this prior to critical deps)
• Refractive Index: ≈ 1.957
• Stress ≈ 499MPa
• HF etch rate:~49nm/min

SiO₂ deposition (PECVD #2)

• Oxide Standard Recipe
• Oxide Data September 2014
• Oxide Thickness uniformity 2014

• Deposition Rate: ≈ 28.50 nm/min (users must calibrate this prior to critical deps)
• Refractive Index: ≈ 1.474
• Stress ≈ -252MPa
• HF etch rate~616nm/min

LS SiN deposition (PECVD #2)

• LS Nitride2 Standard Recipe
• LS Nitride2 Data August 2014

• LS Nitride2 Thickness uniformity 2014

• Deposition Rate: ≈ 8.14 nm/min (users must calibrate this prior to critical deps)
• Refractive Index: ≈ 1.935
• Stress ≈ -7.18MPa
• HF etch rate~48nm/min

Amorphous-Si deposition (PECVD #2)

• Amorphous Si Deposition Recipe