OLD - PECVD2 Recipes
Jump to navigation
Jump to search
PECVD 2 (Advanced Vacuum)
Photos
SiN deposition (PECVD #2)
- Deposition Rate: ≈ 7.93 nm/min (users must calibrate this prior to critical deps)
- Refractive Index: ≈ 1.961
- Stress ≈ 495MPa
- HF etch rate:~49nm/min
SiO2 deposition (PECVD #2)
- Deposition Rate: ≈ 28.50 nm/min (users must calibrate this prior to critical deps)
- Refractive Index: ≈ 1.474
- Stress ≈ -259MPa
- HF etch rate~626nm/min
LS SiN deposition (PECVD #2)
- Deposition Rate: ≈ 7.96 nm/min (users must calibrate this prior to critical deps)
- Refractive Index: ≈ 1.937
- Stress ≈ 2.77MPa
- HF etch rate~47nm/min