Test Data of etching SiO2 with CHF3/CF4
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ICP#2: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec | |||||
Date | Sample# | Etch Rate (nm/min) | Etch Selectivity (SiO2/PR) | Comments | SEM Images |
---|---|---|---|---|---|
8/26/22 | ND_Pan2_082622 | 144.3 | 1.22 | [30D] [CS] | |
8/8/2022 | ND_Pan2_080822 | 134.3 | 1.12 | [30D] [CS] | |
7/29/2022 | ND_Pan2_072922 | 142.3 | 1.20 | [30D] [CS] | |
7/15/2022 | ND_Pan2_071522 | 139.1 | 1.20 | [45D][CS] | |
5/5/2022 | NP_ICP2_07 | 170 | 1.11 | Right after Quartz Top-Plate Temperature reduced 100°C-->50°C. Etch Characteristics look similar to before. | [1] [2] |
4/26/2022 | NP_ICP2_06 | 176.3 | 1.14 | [1] [2] | |
4/20/2022 | NP_ICP2_05 | 171.7 | 1.13 | [1] [2] | |
4/12/2022 | NP_ICP2_04 | 167.9 | 1.17 | [1] [2] | |
3/30/2022 | NP_ICP2_03 | 164 | 1.23 | [1] [2] | |
3/8/2022 | NP_ICP2_02 | 144 | 1.02 | [1] [2] | |
3/2/2022 | NP_ICP2_01 | 169.6 | 1.29 | [1] [2] | |
8/9/2021 | I22105 | 140 | 0.97 | After etching diamond sample for 1 hour using Cl2/Ar. Found chamber/etches are ok. | [1] |
8/9/2021 | I22104 | 147 | 1.06 | Before etching diamond sample for 1 hour using Cl2/Ar | [2] |
7/21/2021 | I22103 | 134 | 1.09 | Investigating reports of low etch rate | [3] |
5/19/2021 | I22102 | 163 | 1.11 | Etch time=130 sec | [4] |
1/7/2021 | I22101 | 144 | 1.20 | [5] | |
8/9/2020 | I22002 | 102 | 0.86 | caused by air leaking to CHF3 channel | [6] |
1/16/2020 | I22001 | 149 | 1.21 | [7] | |
7/18/2019 | I21905 | 162 | 1.37 | [8] | |
3/6/2019 | I21904 | 151 | 1.23 | 85.6 | [9] |
1/28/2019 | I21901 | 146 | 1.23 | [10] | |
10/5/2018 | SiO2#02 | 160 | 1.2 | 82.1 | [11] |
Alternate Data (not updated)
We stopped taking data for the following table in 2019, use the above data instead.