OLD - PECVD2 Recipes

PECVD 2 (Advanced Vacuum)

SiN deposition (PECVD #2)

• Nitride2 Standard Recipe
• Nitride2 Data April 2014
• Nitride2 Thickness uniformity 2014

• Deposition Rate: ≈ 8.29 nm/min
• Refractive Index: ≈ 1.955
• Stress ≈ 498MPa
• HF etch rate:~48nm/min

SiO₂ deposition (PECVD #2)

• Oxide Standard Recipe
• Oxide Data April 2014
• Oxide Thickness uniformity 2014

• Deposition Rate: ≈ 28.36 nm/min
• Refractive Index: ≈ 1.473
• Stress ≈ -256MPa
• HF etch rate~582nm/min

LS SiN deposition (PECVD #2)

• LS Nitride2 Standard Recipe
• LS Nitride2 Data (Deposition Rate, Refractive Index, Stress, HF etch rate )
• LS Nitride2 Data April 2014

• LS Nitride2 Thickness uniformity 2014

• Deposition Rate: ≈ 8.17 nm/min
• Refractive Index: ≈ 1.935
• Stress ≈ -0.04MPa
• HF etch rate~47nm/min

Amorphous-Si deposition (PECVD #2)

• Amorphous Si Deposition Recipe