OLD - PECVD2 Recipes

From UCSB Nanofab Wiki
Revision as of 22:03, 17 October 2014 by Biljana (talk | contribs) (→‎Photos)
Jump to navigation Jump to search

PECVD 2 (Advanced Vacuum)

Photos

SiN deposition (PECVD #2)

  • Deposition Rate: ≈ 7.99 nm/min (users must calibrate this prior to critical deps)
  • Refractive Index: ≈ 1.958
  • Stress ≈ 495MPa
  • HF etch rate:~49nm/min

SiO2 deposition (PECVD #2)

  • Deposition Rate: ≈ 28.50 nm/min (users must calibrate this prior to critical deps)
  • Refractive Index: ≈ 1.474
  • Stress ≈ -259MPa
  • HF etch rate~626nm/min

LS SiN deposition (PECVD #2)

  • Deposition Rate: ≈ 7.96 nm/min (users must calibrate this prior to critical deps)
  • Refractive Index: ≈ 1.937
  • Stress ≈ 2.77MPa
  • HF etch rate~47nm/min

Amorphous-Si deposition (PECVD #2)