Contact Alignment Recipes

From UCSB Nanofab Wiki
Revision as of 15:21, 18 May 2018 by Ningcao (talk | contribs)
Jump to navigation Jump to search

Back to Lithography Recipes.

Notes

Below is a listing of contact lithography recipes for use with designated aligners. Based on your sample reflectivity, absorption, and surface topography the exposure time parameters may vary. This listing is a guideline to get you started. The recipes are tabulated to give you the values of the key parameters you will need to establish your recipe. For best resolution using thin resists, you will need to remove any edge bead before contact and exposure. Also, hard contact mode will give you the most intimate contact between sample and mask, giving the best resolution. Post develop bakes (not listed) are used to make the resist more etch resistant and depend on subsequent processes. Unless otherwise noted, all exposures are done on silicon wafers.

Suss Aligners (SUSS MJB-3)

Positive Resist (MJB-3)

Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 7.5 mW/cm2. Power of the lamp is set using the 405 nm (h-line) detector.

Resist Spin Cond. Bake Thickness Exposure Time Developer Developer Time Comments
AZ4110 4 krpm/30” 95°C/60” ~ 1.1 um 8” AZ400K:DI 1:4 50"
AZ4210 4 krpm/30” 95°C/60” ~ 2.1 um 13” AZ400K:DI 1:4 70”
AZ4330 4 krpm/30” 95°C/60” ~ 3.3 um 18” AZ400K:DI 1:4 90”
SPR220-3.0 3.5 krpm/30” 115°C/90” ~ 2.5 um 25” AZ300MIF 50”
SPR220-7.0 3.5 krpm/45” 115°C/120” ~ 7.5 um 60” AZ300MIF 70”

Negative Resist (MJB-3)

Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 7.5 mW/cm2. Power of the lamp is set using the 405 nm (h-line) detector. In general, many negative resists require post-exposure-bakes (PEB) / flood exposures in order to make the negative tone of the image. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut.

Resist Spin Cond. Bake Thickness Exposure Time PEB Flood Developer Developer Time Comments
AZ5214 6 krpm/30” 95°C/60” ~ 1 um 5” 110°C/60” 60” AZ400K:DI 1:5.5
or
AZ300MIF 		60"

45"
  • Concentrated 400K Dev. Etches 5214
AZ5214 6 krpm/30” 95°C/60” ~ 1 um 10” 110°C/60” 60” AZ300MIF 45”
  • Using i-line filter in MJB-3. 0.7 um resolution possible
AZnLOF2020 3 krpm/30” 110°C/90” ~ 2.1 um 10” 110°C/60” AZ300MIF 60”
NR9-6000PY 3 krpm/30” 140°C/180” ~ um 30” 100°C/60” AZ300MIF 30”
  • Before the litho, do Gasonics #3 120"; Bake at 140 C 5 minutes

Contact Aligner (SUSS MA-6)

Positive Resist (MA-6)

Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 18.1 mW/cm2 (Channel 1). Power of the lamp is set using the 405 nm (h-line) detector. For the MA-6 aligner, using Channel 1, the exposure times given below are the same as the MJB-3 except they have been reduced by a factor of 2.4.

Resist Spin Cond. Bake Thickness Exposure Time Developer Developer Time Comments
AZ4110 4 krpm/30” 95°C/60” ~ 1.1 um 3.3” AZ400K:DI 1:4 50"
AZ4210 4 krpm/30” 95°C/60” ~ 2.1 um 5.4” AZ400K:DI 1:4 70”
AZ4330 4 krpm/30” 95°C/60” ~ 3.3 um 7.5” AZ400K:DI 1:4 90”
SPR955CM-0.9 3 krpm/30” 95°C/60” ~ 0.9 um 8” AZ300MIF 70”
  • Post Exposure Bake 110°C /60”
SPR220-3.0 3.5 krpm/30” 115°C/90” ~ 2.5 um 10.4” AZ300MIF 50”
  • Post Bake 115°C /60”
  • Better Cl2 etch resistance than 4330
SPR220-7.0 3.5 krpm/45” 115°C/120” ~ 7.5 um 25” AZ300MIF 70”

Negative Resist (MA-6)

Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 18.1 mW/cm2 (Channel 1). Power of the lamp is set using the 405 nm (h-line) detector.

In general, many negative resists require post-exposure-bakes (PEB) / flood exposures in order to make the negative tone of the image. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut. For the MA-6 aligner, using Channel 1, the exposure times given below are the same as the MJB-3 except they have been reduced by a factor of 2.4.

Resist Spin Cond. Bake Thickness Exposure Time PEB Flood Developer Developer Time Comments
AZ5214 6 krpm/30” 95°C/60” ~ 1 um 2.1” 110°C/60” 60” (at 7.5 mW/cm2) AZ400K:DI 1:5.5
or
AZ300MIF 		60"

45"
  • Concentrated 400K Dev. Etches 5214
AZnLOF2020 3 krpm/30” 110°C/90” ~ 2.1 um 4.2” 110°C/60” AZ300MIF 60”
  • For Undercut
AZnLOF2035 2.5 krpm/30” 110°C/60” ~ 3.5 um 5.0” 110°C/60” AZ300MIF 70”
  • For Undercut
Retrieved from "https://wiki.nanofab.ucsb.edu/w/index.php?title=Contact_Alignment_Recipes&oldid=155143"