PECVD1 Wafer Coating Process
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There are two standard recipes for SiN and SiO2 at 250C in PECVD#1. Instructions bellow explain how to run each deposition.
SiN @250C
- Log in to PECVD #1
- Seasoning
- Load the seasoning recipe (SiN seasoning), and run it. The goal of this step is to coat chamber walls and prepare it for deposition.
- Deposition
- Vent the chamber and load the substrate (place it in the center of platen). You can place small pieces around the wafer to protect it from moving.
- Pump down.
- Load the deposition recipe (SiN@250C), and run it. Deposition time is variable. Get the rate from historical data.
- Unload the wafer.
- Cleaning
- Wipe sidewall first with DI water, followed by IPA.
- Load the cleaning recipe (CH4/O2 clean). Edit the recipe and enter required time for cleaning.
- Log out
SiO2 @250C
- Log in to PECVD #1
- Seasoning
- Load the seasoning recipe( SiO2 seasoning), and run it. The goal of this step is to coat chamber walls and prepare it for deposition.
- Deposition
- Vent the chamber and load the substarte (place it in the center of platen). You can place small pieces around the wafer to protect it from moving.
- Pump down.
- Load the deposition recipe( SiO2@250C), and run it. Deposition time is variable. Get the rate from historical data.
- Unload the wafer.
- Cleaning
- Wipe sidewall first with DI water, followed by IPA.
- Load for cleaning recipe (CF4/O2). Edit the recipe and enter required time for cleaning.
- Log out