ICP-PECVD (Unaxis VLR)

ICP-PECVD (Unaxis VLR) Tool Type Vacuum Deposition Location Bay 1 Supervisor Tony Bosch Supervisor Phone (805) 893-3486 Supervisor E-Mail bosch@ece.ucsb.edu Description High Density ICP PECVD Manufacturer Unaxis Vacuum Deposition Recipes Sign up for this tool

About

This system is configured as an ICP PECVD deposition tool with 1000 W ICP power, 600 W RF substrate power, and 100°C-350°C operation. This chamber has 100% SiD_4, N₂, O₂, and Ar for gas sources. The high density PECVD produces a more dense, higher quality SiO₂ and Si₃N₄, as compared with conventional PECVD. With the high density plasma, deposition of high quality films can be deposited as low as 100°C for processes requiring lower temperatures. Stress compensation for silicon nitride is characterized.

Cluster Configuration

A Deposition and Etch chamber are both attached to the same loadlock, allowing etching and deposition without breaking vacuum. Each chamber can be scheduled separately on SignupMonkey.

• PM3: ICP-PECVD Deposition (this page)
• PM1: ICP Etch (Unaxis VLR)

Detailed Specifications

• 1000W ICP source, 600W RF Sample Bias Power Supply
• 100 - 350°C sample temperature
• 100% SiD₄, Ar, N₂, O₂
• Multiple 4” diameter wafer capable system
• Pieces possible by mounting or placing on 4 ” wafer

Documentation

• Operating Instructions
• Unaxis wafer coating procedure
• For particle counting method, see the Surfscan Scanning Procedure

Recipes

You can find recipes for this tool on the Wiki > Recipes > PECVD Recipes page