Test Data of etching SiO2 with CHF3/CF4

ICP#2: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec
Date	Sample#	Etch Rate (nm/min)	Etch Selectivity (SiO2/PR)	Comments	SEM Images;
10/21/22	ND_Pan2_102122	148.6	1.37		[30D] [CS]
10/10/22	ND_Pan2_101022	118.3	1.07		[30D] [CS]
10/3/22	ND_Pan2_100322	143.1	1.23		[30D] [CS]
9/26/22	ND_Pan2n_092622	131.4	1.40	Samples from new wafer	[30D] [CS]
9/26/22	ND_Pan2o_092622	130.6	1.14	Samples from old wafer	[45D] [CS]
9/12/22	ND_Pan2_091222	156	1.33	Higher etch rate/selectivity, may be due to new Si wafer	[30D] [CS]
8/26/22	ND_Pan2_082622	144.3	1.22		[30D] [CS]
8/8/2022	ND_Pan2_080822	134.3	1.12		[30D] [CS]
7/29/2022	ND_Pan2_072922	142.3	1.20		[30D] [CS]
7/15/2022	ND_Pan2_071522	139.1	1.20		[45D][CS]
5/5/2022	NP_ICP2_07	170	1.11	Right after Quartz Top-Plate Temperature reduced 100°C-->50°C. Etch Characteristics look similar to before.	[1] [2]
4/26/2022	NP_ICP2_06	176.3	1.14		[1] [2]
4/20/2022	NP_ICP2_05	171.7	1.13		[1] [2]
4/12/2022	NP_ICP2_04	167.9	1.17		[1] [2]
3/30/2022	NP_ICP2_03	164	1.23		[1] [2]
3/8/2022	NP_ICP2_02	144	1.02		[1] [2]
3/2/2022	NP_ICP2_01	169.6	1.29		[1] [2]
8/9/2021	I22105	140	0.97	After etching diamond sample for 1 hour using Cl2/Ar. Found chamber/etches are ok.	[1]
8/9/2021	I22104	147	1.06	Before etching diamond sample for 1 hour using Cl2/Ar	[2]
7/21/2021	I22103	134	1.09	Investigating reports of low etch rate	[3]
5/19/2021	I22102	163	1.11	Etch time=130 sec	[4]
1/7/2021	I22101	144	1.20		[5]
8/9/2020	I22002	102	0.86	caused by air leaking to CHF3 channel	[6]
1/16/2020	I22001	149	1.21		[7]
7/18/2019	I21905	162	1.37		[8]
3/6/2019	I21904	151	1.23	85.6	[9]
1/28/2019	I21901	146	1.23		[10]
10/5/2018	SiO2#02	160	1.2	82.1	[11]

Alternate Data (not updated)

We stopped taking data for the following table in 2019, use the above data instead.

• Test Data of etching SiO2 with CHF3/CF4/O2