ASML Stepper 3 - UCSB Test Reticles

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Other Masks and Images

We have various patterns on other plates, such as:

  • various line/space,
  • alignment markers modifications,
  • full-field exposure,
  • 1mm boxes

See this document for programming info:

UCSB Masks and Images for ASML

  • These are inside the Secure Google Drive folder, you will need to login with your UCSBNetID to access. Ask the Supervisor for access.
  • Remember your UCSB NetID is a Google Login, formatted as MyNetID@ucsb.edu. If you are trained on the tool, you already have access using this UCSB NetID login.

Alignment Marks for other systems, other patterns

Reticle ID: "UCSBMARKS26"

This reticle is always installed in the system, in the "System Reticles" Box #1.

Contains many alignment marks, for as many litho systems in the Nanofab as possible. Also edge-bead removal 1cm field, dicing guides, 1mm "boxes" for Laser Monitoring, verniers etc.

See the GDS File & Programming Params in the UCSB Masks Google Drive (login via UCSB NetID)

Image ID Image Size

(Wafer, mm)

Image Shift

(Wafer, mm)

Notes/Description Schematics
X Y X Y
Alignment Markers
Square_30p5 0.030500 0.030500 -4.000000 -1.000000
RaithMark_20um 0.020000 0.020000 -4.000000 -4.000000
MLA_Align 0.700000 0.700000 -4.000000 10.500000
GCA_Align 0.350000 0.150000 -4.000000 9.000000 Coord is center to GCA mark. Center of DFAS mark is +0.200mm to the right. White is Chrome, Pattern is Clear

CAD File (GDS):GCA_stepper_align.gds

Contact_AlignLyr2 0.300000 0.300000 -4.000000 -5.500000
Open Squares of various sizes
Square_100um 0.100000 0.100000 7.500000 12.000000
Square_200um 0.200000 0.200000 6.000000 12.000000
Square_500um 0.500000 0.500000 4.500000 12.000000 Good for Laser Monitor openings
Square_1mm 1.000000 1.000000 2.500000 12.000000 Preferred for Laser Monitor openings
Square_2mm 2.000000 2.000000 0.000000 12.000000
Square_5mm 5.000000 5.000000 8.500000 8.000000
Square_10mm 10.000000 10.000000 6.000000 -5.000000 Good for Edge-Bead Exposure

More patterns can be found on the OAS file and the Excel Sheet of ASML Programming Parameters

(see gDrive folder here - requires UCSB NetID), such as:

  • Same alignment marks as above, but with X/Y Vernier alignment measurements
  • Layer-2 Vernier (to match the above verniers)
  • Dicing guides in X & Y
  • ASML PM Marks rotated by 90°, 180° and 270°
  • Calibration patterns used in Nanofab LithoCals and EtchCals, such as
    • Hex array of holes at 250nm diam / 250nm gap
    • Hex array of holes at 400nm diam / 300nm gap (ASML LithoCals)
    • 10µm, 1µm, 0.50µm Line/Space (DSE EtchCals)
  • Complementary (Layer-2) Alignment Marks for Contact, Inverted marks

Reticle ID: "UCSB-OPC1"

This reticle is always installed in the system, in the "System Reticles" Box #1.

The reticle contains alignment markers for various NanoFab lithography systems, along with resolution test structures and patterns for calibrating optical proximity correction on the system. Some patterns are proprietary to the mask designer, so we can not share the full GDS CAD file.

Alignment Markers

Image ID Image Size

X , Y

(Wafer, mm)

Image Shift

X , Y

(Wafer, mm)

Notes/Description Schematics
GCA_Align 0.530000 , 0.140000 -6.750000 , 9.450000 ImageShift references the center of the -X- "global" mark.

The ==||| "Local" mark is X+200µm to the right

has 1.1mm margin on all sides

White is Chrome, Pattern is Clear

CAD File (GDS):GCA_stepper_align.gds

JEOL E-Beam Litho Alignment Mark - Positive 0.900000 , 0.900000 -6.750000 , -9.450000 ImageShift is the center coords of the larger "+" mark

Smaller "+" mark is (0.225,-0.225)mm down-right

0.925mm margin on all sides

White is Chrome, Pattern is Clear

CAD File (GDS): EBL-GlobalMulti_POS.gds

JEOL E-Beam Litho Alignment Mark - Negative 0.710000 , 0.710000 6.750000 , -9.450000 ImageShift is the center coords of the larger "+" mark

Smaller "+" mark is (0.225,-0.225)mm down-right

Blank (masked) space on left+top sides

1.0mm margin on all sides

Striped area is Clear

CAD File (GDS): EBL-GlobalMulti_NEG.gds

Contact Mark 0.564000 , 0.564000 6.750000 , 9.450000 ImageShift references the center of the contact alignment mark "+"

with 1.1mm margin on all sides

Note the Polarity - will expose a ~550µm area.

White is Chrome, Striped area is Clear

CAD File (GDS): Contact-AlignFront.gds

Corresponding male/female alignment marks (GDS): MA6-FrontBack_AlignMarks_only.gds

Resolution Test Charts

The Resolution test charts are repeated all across the reticle, in order to test for lens aberrations. You can have the system expose only a single resolution chart, but since they are placed closely together on the reticle, it's very likely that partial shots of adjacent charts will also be exposed.

In addition, the repeating cells allow us to test for the proper optical proximity correction (OPC) algorithm. The Five Dense_... patterns are for calibrating the OPC algorithm, and are not for user analysis.

Patterned area is CLEAR/transparent.

Calibration Chart Layout

Cell name is "UCSB_Cal", with coordinates below pointing to center of this cell.

Layout of the repeating calibration charts
Layout of the repeating calibration charts
Resolution Chart

"resolution_chart_ORIG" cell in the above. Blue/patterned area is CLEAR/transparent.

Resolution Chart Layout schematic
"resolution_chart_ORIG": Resolution Chart Layout, with res. test from 2.00µm to 0.130µm

The ""resolution_chart_OPC" version has an optical proximity correction algorithm applied:

OPC'd Resolution Chart Layout schematic
"resolution_chart_OPC": OPC'd Resolution Chart Layout, with res. test from 2.0µm to 0.130µm
Coords for "resolution_chart" Calibration patterns

Image coords for each of the "resolution_chart_ORIG" cells. You can pick just one of these for shooting a resolution test structure. The purpose of the many different locations is to check for variations due to lens aberrations. You could just choose one near the center of the plate to test your process, or you could choose a chart that is in a similar location as the pattern you're shooting on your mask plate.

Note that some portion of the adjacent patterns will likely be exposed as well, due to the patterns not being surrounded by 1mm of chrome. Make sure you set your Cell Size large enough to make sure the bleed-over doesn't overlap with adjacent die.

Image Size

X , Y

(Wafer, mm)

Image Shift

X

(Wafer, mm)

Image Shift

Y

(Wafer, mm)

Use this for a single Resolution Chart:
0.605 , 1.005 0.685000 1.350000
The following are Res Charts across the exposure field:
0.605 , 1.005 -10.115000 12.150000
same for each -7.415000 12.150000
" " -4.715000 12.150000
" " -2.015000 12.150000
" " 0.685000 12.150000
" " 3.385000 12.150000
" " 6.085000 12.150000
" " 8.785000 12.150000
-10.115000 9.450000
Alignment Marker
-4.715000 9.450000
-2.015000 9.450000
0.685000 9.450000
3.385000 9.450000
Alignment Marker
8.785000 9.450000
-10.115000 6.750000
-7.415000 6.750000
-4.715000 6.750000
-2.015000 6.750000
0.685000 6.750000
3.385000 6.750000
6.085000 6.750000
8.785000 6.750000
-10.115000 4.050000
-7.415000 4.050000
-4.715000 4.050000
-2.015000 4.050000
0.685000 4.050000
3.385000 4.050000
6.085000 4.050000
8.785000 4.050000
-10.115000 1.350000
-7.415000 1.350000
-4.715000 1.350000
-2.015000 1.350000
0.685000 1.350000
3.385000 1.350000
6.085000 1.350000
8.785000 1.350000
-10.115000 -1.350000
-7.415000 -1.350000
-4.715000 -1.350000
-2.015000 -1.350000
0.685000 -1.350000
3.385000 -1.350000
6.085000 -1.350000
8.785000 -1.350000
-10.115000 -4.050000
-7.415000 -4.050000
-4.715000 -4.050000
-2.015000 -4.050000
0.685000 -4.050000
3.385000 -4.050000
6.085000 -4.050000
8.785000 -4.050000
-10.115000 -6.750000
-7.415000 -6.750000
-4.715000 -6.750000
-2.015000 -6.750000
0.685000 -6.750000
3.385000 -6.750000
6.085000 -6.750000
8.785000 -6.750000
-10.115000 -9.450000
Alignment Marker
-4.715000 -9.450000
-2.015000 -9.450000
0.685000 -9.450000
3.385000 -9.450000
Alignment Marker
8.785000 -9.450000
-10.115000 -12.150000
-7.415000 -12.150000
-4.715000 -12.150000
-2.015000 -12.150000
0.685000 -12.150000
3.385000 -12.150000
6.085000 -12.150000
8.785000 -12.150000
Coords for "UCSB_Cal" Calibration Patterns

Each of the above "UCSB_Cal" cells, including all 7 patterns, is repeated on the following coordinates across the plate (coords are to the center of the "UCSB_Cal" cell):

Image Size

X , Y

(Wafer, mm)

Image Shift

X

(Wafer, mm)

Image Shift

Y

(Wafer, mm)

2.610000 , 2.610000 -9.450000 12.150000
same as above -6.750000 12.150000
" " -4.050000 12.150000
" " -1.350000 12.150000
" " 1.350000 12.150000
" " 4.050000 12.150000
" " 6.750000 12.150000
" " 9.450000 12.150000
-9.450000 9.450000
Alignment Marker
-4.050000 9.450000
-1.350000 9.450000
1.350000 9.450000
4.050000 9.450000
Alignment Marker
9.450000 9.450000
-9.450000 6.750000
-6.750000 6.750000
-4.050000 6.750000
-1.350000 6.750000
1.350000 6.750000
4.050000 6.750000
6.750000 6.750000
9.450000 6.750000
-9.450000 4.050000
-6.750000 4.050000
-4.050000 4.050000
-1.350000 4.050000
1.350000 4.050000
4.050000 4.050000
6.750000 4.050000
9.450000 4.050000
-9.450000 1.350000
-6.750000 1.350000
-4.050000 1.350000
-1.350000 1.350000
1.350000 1.350000
4.050000 1.350000
6.750000 1.350000
9.450000 1.350000
-9.450000 -1.350000
-6.750000 -1.350000
-4.050000 -1.350000
-1.350000 -1.350000
1.350000 -1.350000
4.050000 -1.350000
6.750000 -1.350000
9.450000 -1.350000
-9.450000 -4.050000
-6.750000 -4.050000
-4.050000 -4.050000
-1.350000 -4.050000
1.350000 -4.050000
4.050000 -4.050000
6.750000 -4.050000
9.450000 -4.050000
-9.450000 -6.750000
-6.750000 -6.750000
-4.050000 -6.750000
-1.350000 -6.750000
1.350000 -6.750000
4.050000 -6.750000
6.750000 -6.750000
9.450000 -6.750000
-9.450000 -9.450000
Alignment Marker
-4.050000 -9.450000
-1.350000 -9.450000
1.350000 -9.450000
4.050000 -9.450000
Alignment Marker
9.450000 -9.450000
-9.450000 -12.150000
-6.750000 -12.150000
-4.050000 -12.150000
-1.350000 -12.150000
1.350000 -12.150000
4.050000 -12.150000
6.750000 -12.150000
9.450000 -12.150000