Difference between revisions of "Oxford ICP Etcher - Process Control Data"
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Revision as of 11:16, 12 April 2022
Data - InP Ridge Etch (Oxford ICP Etcher)
PECVD SiO2 hardmask, patterned on Stepper #2 (AutoStep 200) & Panasonic ICP #1
InP Ridge Etch: 60°C, 3mT, 800W/65W, Cl2=18, H2=15, CH4=10sccm, time=5min00sec (300sec)
Sample Size: 1x1cm, ~30-40% SiO2 masking (NingC's pattern). Silicon carrier, no adhesive. | |||||
Date | Sample# | Etch Rate (nm/min) | Etch Selectivity (InP/SiO2) | Comments | SEM Images |
1/26/22 | NP_1_26_001 | ~400nm | 240 nm left | ~30-40% SiO2 masking (NingC's pattern) | [1] [2] |
1/26/22 | NP_1_26_003 | 452 | 260-280nm left | ~30-40% SiO2 masking (NingC's pattern) | [1] [2] |
3/30/22 | NP_60c_004 | 427 | 11.17 | *etched for 3min* | [1][2] |
Dependence on Sample Size
We have found that the size of the InP piece loaded (no adhesive, onto Silicon carrier wafer) affects the etch rate, but does not affect the etch profile - ie. etches are still smooth and vertical, but rate varies with sample area.
InP Ridge Etch: 60°C, 3mT, 800W/65W, Cl2=18, H2=15, CH4=10sccm, time=5min05sec (305sec)
Silicon carrier, no adhesive. | |||||||
Date | Sample# | Sample Size (dimensions, mm) | Sample Size (area, mm2) | Etch Rate (nm/min) | Etch Selectivity (InP/SiO2) | Comments | SEM Images |
1/11/22 | DJ_InPRidge | 4.5 x 2.5 | 11.25 | 602 | 64.6nm left | ~50% SiO2 masking (GCA Calibration pattern) | [1] |
1/12/22 | DJ_InPRidge | 4.5 x 3 | 13.5 | 563 | 76.4nm left | ~50% SiO2 masking (GCA Calibration pattern) | [2] |
1/12/22 | DJ_InP#3 | 4.5 x 3 | 13.5 | 612 | 71nm left | ~50% SiO2 masking (GCA Calibration pattern) | [3] |
1/26/22 | NP_? | 10 x 10 | 100 | 400-450 | ~250nm left | ~30-40% SiO2 masking (NingC's pattern) | |
1/26/22 | NP_? | 1/4 of 50mm wafer | 490 | 378 | 276nm left | ~30-40% SiO2 masking (NingC's pattern) | [1] |