Difference between revisions of "Rapid Thermal Processor (AET RX6)"

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Revision as of 10:44, 31 March 2014

Rapid Thermal Processor (AET RX6)
Tool Type Vacuum Deposition
Location Bay 3
Supervisor Brian Lingg
Supervisor Phone (805) 893-8145
Supervisor E-Mail lingg_b@ucsb.edu
Description PECVD Plasma Therm 790 For Oxides And Nitrides
Manufacturer Plasma-Therm
Vacuum Deposition Recipes
Sign up for this tool


Our rapid thermal annealer is manufactured by AET. Heating is achieved through two banks of heat lamps that deliver optical energy through the all-quartz chamber. With this unit, near atmospheric pressure anneals in Nitrogen, Forming Gas (10%H2 / 90%N2), or Dry Air (~ 10%O2 / ~ 90%N2) can be done to temperatures up to 1200°C for three minutes. An inner liner is used to prevent contamination to the main quartz chamber. A thermocouple and pyrometer are available for maintaining temperature control. The system can hold one 4-inch wafer or smaller substrates placed on top of a Silicon carrier wafer. Custom windows based control software has been added to the system by Sedona Visual Controls. All process parameters are monitored and stored. Typical anneals are done for: ohmic contact formation to semiconductors, implant activation, damage annealing, dopant activation, and film densification. A variety of materials can be annealed in the chamber, including Si, SiO2, Si3N4, GaAs, InP, GaSb, GaN, and metals. For materials that will decompose at the elevated temperatures, a dielectric anneal cap must be deposited on the wafer or an enclosed wafer holder must be used to prevent contamination of the chamber walls.

Detailed Specifications

  • Temperatures of 1000°C for 20 min., 1100°C for 5 min., 1200°C for 1 min. Nitrogen, Forming Gas, Dry Air at flows up to 10000 lpm TC use for anneals up to 1000°C Pyrometer for temperatures above 400°C
  • Windows-based process monitoring and control software by Sedona Visual Controls

Max temp/Time


Temperature Time
1000°C 1 Hour
1100°C 10 min
1200°C 3 min
1300°C 10 sec