Difference between revisions of "Suss Aligners (SUSS MJB-3)"

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(→‎Documentation: link to mask ordering info for UCSB users)
 
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{{tool|{{PAGENAME}}
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{{tool2|{{PAGENAME}}
 
|picture=SussAligner.jpg
 
|picture=SussAligner.jpg
 
|type = Lithography
 
|type = Lithography
 
|super= Lee Sawyer
 
|super= Lee Sawyer
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|super2= Don Freeborn
 
|phone=(805) 893-2123
 
|phone=(805) 893-2123
 
|location=Bay 6
 
|location=Bay 6
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}}
 
}}
 
==About==
 
==About==
  +
We have two high-performance mask aligners for contact exposure processes. They are manual mechanical systems alignment, contact/proximity, with exposure shuttered by a timer. The resolution (depending on contact mode, optics and exposure wavelength and "operator technique") is into the submicron region. (See descriptions for our "Std." and "IR" units).
We have three high-performance mask aligners for contact exposure processes. The resolution (depending on contact mode, optics and exposure wavelength and "operator technique") is into the submicron region. (See descriptions for our "L", "R" and "IR" units). Our left and IR units are configured for the near-UV window (365 and 405 nm). Using a filter, these two systems can be configured for I-line (350 nm) only, assisting in resolution. All units have the "vacuum contact" option extending resolution to ~0.7 microns. Higher resolution optic systems that can be supplied by Suss are given below. The standard soft and hard contact modes of mechanical and pneumatic pressure respectively, give resolution to ~1 micron. Exposures can be done on substrates from small "piece parts" of less than 1 cm square to substrates of 3 inch diameter or square. Special black chucks may be used for transparent materials. For backside alignment through opaque materials such as Si or GaAs, our IR aligner can be used and is described below. Masks up to 4 inches in size can be used although only 3” x 3” of this area is usable. A 4” wafer can be exposed with the system. However, only 3” x 3” will be exposed on the wafer and vacuum mode is unavailable.
 
  +
  +
Our units are configured for the near-UV window (365 and 405 nm). All units have the "vacuum contact" option extending resolution to ~0.7 microns. Higher resolution optic systems that can be supplied by Suss are given below. The standard soft and hard contact modes of mechanical and pneumatic pressure respectively, give resolution to ~1 micron.
  +
  +
Exposures can be done on substrates from small "piece parts" of less than 1 cm square to substrates of 3 inch diameter or square. Masks up to 4 inches in size can be used although only 3” x 3” of this area is usable. A 4” wafer can be exposed with the system. However, only 3” x 3” will be exposed on the wafer and vacuum mode is unavailable.
  +
  +
====Backside Alignment====
  +
On the Standard MJB-3, special black chucks may be used for optically transparent materials, allowing you to view through the wafer.
  +
  +
For backside alignment through opaque materials such as Si or GaAs, our IR aligner has backside infrared illumination (halogen bulb) through these black chucks. A Hammamatsu IR camera is installed to view the infrared image.
  +
  +
Using a filter, the IR system can be configured for I-line (350 nm) only, assisting in resolution.
   
 
==Detailed Specifications==
 
==Detailed Specifications==
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*Wafer / substrate thickness: 0-4.5 mm
 
*Wafer / substrate thickness: 0-4.5 mm
 
*Exposure optics:
 
*Exposure optics:
**Left unit: 280-450 nm/200 W mercury lamp (can filter to 350 nm)
+
**Standard unit (Aligner #1): 350-450 nm/200 W mercury lamp
**Right unit: 350-450 nm/200 W mercury lamp
 
 
**IR unit: 280-450 nm/200 W mercury lamp (can filter to 350 nm)
 
**IR unit: 280-450 nm/200 W mercury lamp (can filter to 350 nm)
 
*Additional manufacturer options (none installed on our systems):
 
*Additional manufacturer options (none installed on our systems):
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**±5% over 3" diameter
 
**±5% over 3" diameter
   
==Aligner with No Filter==
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===IR Aligner===
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[[image:DUV-Spectra-No-Filter.png|thumb|none|600px|Aligner with No Filter]]
 
  +
*Backside illumination with halogen bulb & transparent chuck
==Aligner with Filter for i-line Exposure==
 
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*Hammamatsu infrared camera and monitor
[[image:DUV-Spectra-With-Filter.png|thumb|none|600px|Aligner with Filter for i-line Exposure]]
 
  +
*Through-wafer alignment and/or inspection.
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  +
===Exposure Optical Spectrum with No Filter===
 
[[image:DUV-Spectra-No-Filter.png|thumb|none|Aligner with No Filter]]
 
===Exposure Optical Spectrum with Filter for i-line Exposure===
 
[[image:DUV-Spectra-With-Filter.png|thumb|none|302x302px|Aligner with Filter for i-line Exposure]]
 
==Documentation==
 
==Documentation==
   
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*[https://wiki.nanotech.ucsb.edu/wiki/images/d/de/MJB_3_SOP.pdf MJB-3 Standard Operating Procedure]
*{{file|Suss MJB3 SOP1.pdf|Suss_MJB3_Standard Operating Instruction1.pdf}}
 
*[https://www.nanotech.ucsb.edu/wiki/images/d/de/MJB_3_SOP.pdf MJB 3 Standard Operating Procedure]
+
*[https://wiki.nanotech.ucsb.edu/w/images/7/70/MJB_3_IR_Camera_SOP_Rev_B.pdf MJB-3 IR Camera Operation]
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*[https://wiki.nanotech.ucsb.edu/w/images/1/11/MJB_3_IR_Alignment_Mode_Conversion.pdf MJB-3 IR Alignment Mode Conversion]
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*[[Photomask Ordering Procedure for UCSB Users]] - see this page for how to submit your order into the purchasing system.
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  +
===CAD Files===
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*Male/female alignment marks (GDS): [[Media:MA6-FrontBack AlignMarks only.gds|MA6-FrontBack_AlignMarks_only.gds]]
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==Recipes==
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  +
*Recipes > Lithography > Photolithography Recipes > [[Contact Alignment Recipes#Suss Aligners .28SUSS MJB-3.29|'''<u>SUSS MJB-3</u>''']]
  +
**''Starting recipes for various I-Line photoresists, positive and negative.''

Latest revision as of 13:08, 22 September 2023

Suss Aligners (SUSS MJB-3)
SussAligner.jpg
Location Bay 6
Tool Type Lithography
Manufacturer Karl Suss America
Description Mask Aligner - MJB 3 UV400

Primary Supervisor Lee Sawyer
(805) 893-2123
lee_sawyer@ucsb.edu

Secondary Supervisor

Don Freeborn


Recipes N/A


About

We have two high-performance mask aligners for contact exposure processes. They are manual mechanical systems alignment, contact/proximity, with exposure shuttered by a timer. The resolution (depending on contact mode, optics and exposure wavelength and "operator technique") is into the submicron region. (See descriptions for our "Std." and "IR" units).

Our units are configured for the near-UV window (365 and 405 nm). All units have the "vacuum contact" option extending resolution to ~0.7 microns. Higher resolution optic systems that can be supplied by Suss are given below. The standard soft and hard contact modes of mechanical and pneumatic pressure respectively, give resolution to ~1 micron.

Exposures can be done on substrates from small "piece parts" of less than 1 cm square to substrates of 3 inch diameter or square. Masks up to 4 inches in size can be used although only 3” x 3” of this area is usable. A 4” wafer can be exposed with the system. However, only 3” x 3” will be exposed on the wafer and vacuum mode is unavailable.

Backside Alignment

On the Standard MJB-3, special black chucks may be used for optically transparent materials, allowing you to view through the wafer.

For backside alignment through opaque materials such as Si or GaAs, our IR aligner has backside infrared illumination (halogen bulb) through these black chucks. A Hammamatsu IR camera is installed to view the infrared image.

Using a filter, the IR system can be configured for I-line (350 nm) only, assisting in resolution.

Detailed Specifications

  • Wafer size: 3" max. for vacuum mode; 4” for soft contact (3” x 3” exposure area)
  • Substrate size: 3" x 3" max.
  • Wafer / substrate thickness: 0-4.5 mm
  • Exposure optics:
    • Standard unit (Aligner #1): 350-450 nm/200 W mercury lamp
    • IR unit: 280-450 nm/200 W mercury lamp (can filter to 350 nm)
  • Additional manufacturer options (none installed on our systems):
    • DUV (polychromatic): 240-260 nm/350 W Cd-Xe lamp; 0.2 micron resolution (PMMA)
    • DUV (monochromatic): 248 nm/KrF excimer laser; 0.3 micron resolution (PMMA)
    • 193 nm/ArF excimer laser; 0.2 micron resolution (PMMA)
  • Uniformity:
    • ±3% over 2" diameter
    • ±5% over 3" diameter

IR Aligner

  • Backside illumination with halogen bulb & transparent chuck
  • Hammamatsu infrared camera and monitor
  • Through-wafer alignment and/or inspection.

Exposure Optical Spectrum with No Filter

Aligner with No Filter

Exposure Optical Spectrum with Filter for i-line Exposure

Aligner with Filter for i-line Exposure

Documentation

CAD Files

Recipes

  • Recipes > Lithography > Photolithography Recipes > SUSS MJB-3
    • Starting recipes for various I-Line photoresists, positive and negative.