Test Data of Etching SiO2 with CHF3/CF4-Fluorine ICP Etcher: Difference between revisions
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|Observations/Notes |
|Observations/Notes |
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|SEM Images (45d, cross section) |
|SEM Images (45d, cross section) |
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|9/12/22 |
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|ND_FL_091222 |
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|278 |
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|1.33 |
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|high selectivity, may be |
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due to new Si wafer |
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|[https://wiki.nanotech.ucsb.edu/w/images/8/8e/30D_FICP_091222_002.jpg <nowiki>[30D]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/e/e7/CS_FICP_091222_002.jpg <nowiki>[CS]</nowiki>] |
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|8/26/22 |
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|ND_FL_082622 |
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|288 |
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|0.97 |
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|Low selectivity/e. rate |
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|[https://wiki.nanotech.ucsb.edu/w/images/b/b9/30D_FICP_082622_001.jpg <nowiki>[30D]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/8/86/CS_FICP_082622_001.jpg <nowiki>[CS]</nowiki>] |
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|8/22/22 |
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|ND_FL_082222 |
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|252.7 |
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|0.93 |
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|Lower selectivity/e. rate |
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|[https://wiki.nanotech.ucsb.edu/w/images/3/3d/40D_FICP_082222_001.jpg <nowiki>[40D]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/5/5b/CS_FICP_082222_002.jpg <nowiki>[CS]</nowiki>] |
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|8/19/22 |
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|ND_Fl_081922 |
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|260.7 |
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|0.99 |
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|Low selectivity/etch rate |
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|[https://wiki.nanotech.ucsb.edu/w/images/8/82/30D_08192022_FICP_001.jpg <nowiki>[30D]</nowiki>][https://wiki.nanotech.ucsb.edu/w/images/5/56/CS_08192022_FICP_001.jpg <nowiki>[CS]</nowiki>] |
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|5/18/22 |
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|NP_SiO2_Fl_10 |
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|308.7 |
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|1.19 |
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|still lower etch rate |
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|[https://wiki.nanotech.ucsb.edu/w/images/5/5d/SiO2_Fl_10_45D-003.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/0/06/SiO2_Fl_10_CS_007.jpg <nowiki>[2]</nowiki>] |
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|5/10/22 |
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|NP_SiO2_Fl_09 |
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|307.3 |
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|1.15 |
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|*etch rate seems lower* |
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|[https://wiki.nanotech.ucsb.edu/w/images/a/a8/SiO2_Fl_09_45D_005.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/a/a7/SiO2_Fl_09_CS_006.jpg <nowiki>[2]</nowiki>] |
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|4/26/22 |
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|NP_SiO2_Fl_08 |
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|344.7 |
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|1.4 |
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|[https://wiki.nanotech.ucsb.edu/w/images/c/c2/SiO2_Fl_08_45D_004.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/4/47/SiO2_Fl_08_CS_005.jpg <nowiki>[2]</nowiki>] |
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|4/20/22 |
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|NP_SiO2_Fl_07 |
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|354.7 |
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|1.11 |
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|[https://wiki.nanotech.ucsb.edu/w/images/f/f5/SiO2_Fl_07_45D_003.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/3/34/SiO2_Fl_07_CS_004.jpg <nowiki>[2]</nowiki>] |
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|4/14/22 |
|4/14/22 |
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|NP_SiO2_Fl_06 |
|NP_SiO2_Fl_06 |
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|352.7 |
|352.7 |
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|1.11 |
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|*need to measure PR |
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|[https://wiki.nanotech.ucsb.edu/w/images/7/70/SiO2_Fl_06_45D_002.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/6/68/SiO2_Fl_06_CS_002.jpg <nowiki>[2]</nowiki>] |
|[https://wiki.nanotech.ucsb.edu/w/images/7/70/SiO2_Fl_06_45D_002.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/6/68/SiO2_Fl_06_CS_002.jpg <nowiki>[2]</nowiki>] |
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|3/29/ |
|3/29/22 |
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|NP_SiO2_Fl_05 |
|NP_SiO2_Fl_05 |
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|334.7 |
|334.7 |
Revision as of 15:30, 13 September 2022
This page is under construction - we are in the process of standardizing and collecting process control data for this tool. -- Demis 2022-02-11
Fluorine ICP: 3.8mT, 50/900W, CHF3/CF4=10/30sccm, time=90 sec | ||||||
Date | Sample # | Etch Rate (nm/min) | Etch Selectivity (SiO2/PR) | Averaged Sidewalls Angle | Observations/Notes | SEM Images (45d, cross section) |
9/12/22 | ND_FL_091222 | 278 | 1.33 | high selectivity, may be
due to new Si wafer |
[30D] [CS] | |
8/26/22 | ND_FL_082622 | 288 | 0.97 | Low selectivity/e. rate | [30D] [CS] | |
8/22/22 | ND_FL_082222 | 252.7 | 0.93 | Lower selectivity/e. rate | [40D] [CS] | |
8/19/22 | ND_Fl_081922 | 260.7 | 0.99 | Low selectivity/etch rate | [30D][CS] | |
5/18/22 | NP_SiO2_Fl_10 | 308.7 | 1.19 | still lower etch rate | [1] [2] | |
5/10/22 | NP_SiO2_Fl_09 | 307.3 | 1.15 | *etch rate seems lower* | [1] [2] | |
4/26/22 | NP_SiO2_Fl_08 | 344.7 | 1.4 | [1] [2] | ||
4/20/22 | NP_SiO2_Fl_07 | 354.7 | 1.11 | [1] [2] | ||
4/14/22 | NP_SiO2_Fl_06 | 352.7 | 1.11 | [1] [2] | ||
3/29/22 | NP_SiO2_Fl_05 | 334.7 | 1.07 | [1][2] | ||
3/09/22 | NP_SiO2_Fl_04 | 358.9 | 1.06 | [1] [2] | ||
3/02/22 | NP_SiO2_Fl_03 | 347 | 1.05 | [1] [2] | ||
2/23/22 | NP_SiO2_Fl_02 | 362.7 | 1.02 | [1] [2] |
Fluorine ICP: 3.8mT, 50/900W, CHF3/CF4=10/30sccm, time=210 sec' | ||||||
Date | Sample# | Etch Rate (nm/min) | Etch Selectivity (SiO2/PR) | Averaged Sidewall Angle (o) | Observations/Notes | SEM Image |
11/5/2021 | SOFL01 | 136 | 1.2 | [1] | ||
02/09/22 | NP_SiO2_Fl_01 | Etched for 210s, all of PR was etched off | [1] |
Fluorine ICP: 3.8mT, 50/800W, CHF3/CF4=10/30sccm, time=90 sec | ||||||
Date | Sample# | Etch Rate (nm/min) | Etch Selectivity (SiO2/PR) | Averaged Sidewall Angle (o) | Notes/Observations | SEM Images |
1/28/2021 | FE2102 | 309 | 0.99 | [2] |