Difference between revisions of "Test Data of Etching SiO2 with CHF3/CF4-Fluorine ICP Etcher"
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(pasted Ning's 2nd data table, hilighted recipe changes and comment about data being "in progress") |
m (Added SEMs and some notes to new etch cals done on FL etcher) |
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− | | colspan=" |
+ | | colspan="7" |Fluorine ICP: 3.8mT, 50/800W, CHF3/CF4=10/30sccm, time=90 sec |
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|Date |
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|Etch Selectivity (SiO2/PR) |
|Etch Selectivity (SiO2/PR) |
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|Averaged Sidewall Angle (<sup>o</sup>) |
|Averaged Sidewall Angle (<sup>o</sup>) |
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+ | |Notes/Observations |
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|SEM Images |
|SEM Images |
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|309 |
|309 |
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|0.99 |
|0.99 |
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|[https://wiki.nanotech.ucsb.edu/w/images/0/0b/FE210206.pdf] |
|[https://wiki.nanotech.ucsb.edu/w/images/0/0b/FE210206.pdf] |
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| colspan="6" |Fluorine ICP: 3.8mT, 50/'''900W''', CHF3/CF4=10/30sccm, time='''210 sec'''' |
| colspan="6" |Fluorine ICP: 3.8mT, 50/'''900W''', CHF3/CF4=10/30sccm, time='''210 sec'''' |
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|Date |
|Date |
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|Etch Selectivity (SiO2/PR) |
|Etch Selectivity (SiO2/PR) |
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|Averaged Sidewall Angle (<sup>o</sup>) |
|Averaged Sidewall Angle (<sup>o</sup>) |
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+ | |Observations/Notes |
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|SEM Image |
|SEM Image |
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|136 |
|136 |
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|1.2 |
|1.2 |
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|[https://wiki.nanotech.ucsb.edu/w/images/f/fe/SOFL0103.pdf] |
|[https://wiki.nanotech.ucsb.edu/w/images/f/fe/SOFL0103.pdf] |
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+ | |- |
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+ | |02/09/22 |
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+ | |NP_SiO2_Fl_01 |
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+ | | |
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+ | | |
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+ | | |
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+ | |Etched for 210s, all of PR was etched off |
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+ | |[https://wiki.nanotech.ucsb.edu/w/images/8/80/SiO2_Fl_01_45D_002.jpg <nowiki>[1]</nowiki>] |
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+ | |- |
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+ | |02/23/22 |
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+ | |NP_SiO2_Fl_02 |
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+ | |362.7 |
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+ | | |
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+ | | |
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+ | |Etched for 90s |
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+ | |[https://wiki.nanotech.ucsb.edu/w/images/c/c8/SiO2_Fl_02_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/8/89/SiO2_Fl_02_CS_001.jpg <nowiki>[2]</nowiki>] |
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+ | |- |
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+ | |03/02/22 |
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+ | |NP_SiO2_Fl_03 |
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+ | | |
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+ | | |
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+ | | |
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+ | |Etched for 90s |
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+ | | |
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Revision as of 10:59, 2 March 2022
This page is under construction - we are in the process of standardizing and collecting process control data for this tool. -- Demis 2022-02-11
Fluorine ICP: 3.8mT, 50/800W, CHF3/CF4=10/30sccm, time=90 sec | ||||||
Date | Sample# | Etch Rate (nm/min) | Etch Selectivity (SiO2/PR) | Averaged Sidewall Angle (o) | Notes/Observations | SEM Images |
1/28/2021 | FE2102 | 309 | 0.99 | [1] |
Fluorine ICP: 3.8mT, 50/900W, CHF3/CF4=10/30sccm, time=210 sec' | ||||||
Date | Sample# | Etch Rate (nm/min) | Etch Selectivity (SiO2/PR) | Averaged Sidewall Angle (o) | Observations/Notes | SEM Image |
11/5/2021 | SOFL01 | 136 | 1.2 | [2] | ||
02/09/22 | NP_SiO2_Fl_01 | Etched for 210s, all of PR was etched off | [1] | |||
02/23/22 | NP_SiO2_Fl_02 | 362.7 | Etched for 90s | [1] [2] | ||
03/02/22 | NP_SiO2_Fl_03 | Etched for 90s |