Difference between revisions of "Unaxis VLR Etch - Process Control Data"
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(→Data - InP Ridge Etch (Unaxis VLR): updated chamber conditioning) |
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[[PECVD1-(PlasmaTherm 790)|PECVD SiO2]] hardmask, patterned on [[Stepper 1 (GCA 6300)|Stepper #2 (AutoStep 200)]] & [[ICP Etch 1 (Panasonic E626I)|Panasonic ICP #1]] |
[[PECVD1-(PlasmaTherm 790)|PECVD SiO2]] hardmask, patterned on [[Stepper 1 (GCA 6300)|Stepper #2 (AutoStep 200)]] & [[ICP Etch 1 (Panasonic E626I)|Panasonic ICP #1]] |
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− | | colspan="6" |'''InP Ridge Etch''': |
+ | | colspan="6" |'''InP Ridge Etch''': 200°C, 1.4mT, 800W/125W, Cl<sub>2</sub>=6.3, H<sub>2</sub>=12.7, Ar=2.0 sccm, time=1min30sec (90sec) |
− | Sample Size: 1x1cm, ~30-40% SiO<sub>2</sub> masking (NingC's pattern). Silicon carrier, no adhesive. |
+ | ''Sample Size:'' 1x1cm epi-grade InP, ~30-40% SiO<sub>2</sub> masking (NingC's pattern). Silicon carrier, no adhesive. |
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+ | ''Conditioning:'' Prior to the etch, do O2 clean 15 minutes, then, chamber coating with the same recipe on 1/4-2" InP on Silicon carrier for 15 minutes. |
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Revision as of 15:51, 26 April 2022
Work In Progress This article is still under construction. It may contain factual errors. Content is subject to change. |
Data - InP Ridge Etch (Unaxis VLR)
PECVD SiO2 hardmask, patterned on Stepper #2 (AutoStep 200) & Panasonic ICP #1
InP Ridge Etch: 200°C, 1.4mT, 800W/125W, Cl2=6.3, H2=12.7, Ar=2.0 sccm, time=1min30sec (90sec)
Sample Size: 1x1cm epi-grade InP, ~30-40% SiO2 masking (NingC's pattern). Silicon carrier, no adhesive. Conditioning: Prior to the etch, do O2 clean 15 minutes, then, chamber coating with the same recipe on 1/4-2" InP on Silicon carrier for 15 minutes. | |||||
Date | Sample# | Etch Rate (nm/min) | Etch Selectivity (InP/SiO2) | Comments | SEM Images |
3/30/22 | NP_Unaxis_02 | 1413 | 14.6 | [1] [2] | |
3/9/22 | NP_Unaxis_01 | 1297 | 15.3 | [1] [2] |