Vacuum Deposition Recipes: Difference between revisions
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= Plasma Enhanced Chemical Vapor Deposition (PECVD) = |
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== SiN deposition (PECVD #1) == |
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#'''Clean''' (30CLN_SN) |
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##Initial t=10", p=2x10-2, T=250C |
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##N<sub>2</sub> Purge t=30", p=300mT |
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##evacuate, base pressure=2x10-2, t=10" |
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##loop |
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##gas stabilization, t=30" |
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##etch chamber, t=30' |
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##evacuate, t=10" |
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##N<sub>2</sub> purge |
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##evacuate |
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##loop |
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##SiN gas stabilization |
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##SiN deposition( 200A coat) |
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##evacuate |
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##N<sub>2</sub> purge, t=30" |
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##end |
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#'''SiN deposition''' (SiN_10) 130.8 A/min |
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##Initial t=10" |
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##N<sub>2</sub> purge t=30" |
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##evacuate, t=10" |
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##loop |
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##SiN gas stabilization, t=30" |
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##SiN deposition t=8'11.2" |
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##evacuate, t=10" |
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##N<sub>2</sub> purge t=30" |
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##evacuate t=10" |
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##loop |
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== SiO<sub>2</sub> deposition (PECVD #1) == |
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#'''Clean''' (30CLN_SN) |
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##Initial t=10", p=2x10-2, T=250C |
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##N<sub>2</sub> Purge t=30", p=300mT |
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##evacuate, base pressure=2x10-2, t=10" |
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##loop |
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##gas stabilization, t=30" |
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##etch chamber, t=30' |
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##evacuate, t=10" |
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##N<sub>2</sub> purge |
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##evacuate |
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##loop |
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##SiO<sub>2</sub> gas stabilization |
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##SiO<sub>2</sub> deposition( 200A coat) |
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##evacuate |
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##N<sub>2</sub> purge, t=30" |
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##end |
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#'''SiO<sub>2</sub> deposition''' (SiO2_10) 440.5 A/min |
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##Initial t=10" |
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##N<sub>2</sub> purge t=30" |
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##evacuate, t=10" |
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##loop |
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##SiO<sub>2</sub> gas stabilization, t=30" |
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##SiO<sub>2</sub> deposition t=8'11.2" |
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##evacuate, t=10" |
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##N<sub>2</sub> purge t=30" |
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##evacuate t=10" |
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##loop |
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== SiN deposition (PECVD #2) == |
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#'''Standard clean''' |
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##'''Pump down''': stabilization time t=15", step time(m)=0', step time(s)=30" |
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##'''Pre-purge''': purge=1, stabilization time=15, step time(m)=1, step time(sec)=0 |
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##'''High Pressure''': process pressure=600, RF point=300, stabilization time=35, step time(m)=30, step time(s)=0, CF4/O2(5)=500 |
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##'''Low pressure''': process pressure=300, RF setpoint=300, stabilization time=15, step time(m)=30, step time(s)=0, CF4/O2(5)=500 |
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#'''Nitride 2''' (HF, n=2.0, 93nm/min) |
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##process pressure=800, RF setpoint=30, stabilization time=15, step time(m)=10, step time(s)=0, 2%SiH4%He(1)=1040, N2(3)=980, NH3(2)=17 |
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== SiO<sub>2</sub> deposition (PECVD #2) == |
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#'''Standard clean''' |
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##'''Pump down''': stabilization time t=15", step time(m)=0', step time(s)=30" |
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##'''Pre-purge''': purge=1, stabilization time=15, step time(m)=1, step time(sec)=0 |
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##'''High Pressure''': process pressure=600, RF point=300, stabilization time=35, step time(m)=30, step time(s)=0, CF4/O2(5)=500 |
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##'''Low pressure''': process pressure=300, RF setpoint=300, stabilization time=15, step time(m)=30, step time(s)=0, CF4/O2(5)=500 |
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#'''Oxide''' (HF, n=1.46, 25nm/min) |
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##process pressure=800, RF setpoint=30, stabilization time=15, step time(m)=10, step time(s)=0, 2%SiH4%He(1)=600, N2O(4)=1420 |
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= Atomic Layer Deposition (ALD) = |
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= Ion-Beam Deposition (IBD) = |
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= Molecular Vapor Deposition (MVD) = |
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Revision as of 17:29, 18 July 2012
This table can be used to help located the needed recipe.