PECVD1 Wafer Coating Process: Difference between revisions
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There are two standard recipes for SiN and SiO2 deposition at 250C in PECVD#1. Instructions bellow explain how to run process (seasoning, deposition, cleaning). |
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== SiN == |
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=== Standard Si3N4 (Silicon-Nitride) Deposition === |
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== SiO2 == |
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==== SiN Deposition ==== |
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# Log in to PECVD #1 |
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# Seasoning |
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#* Load the seasoning recipe (SiN seasoning), and run it. The goal of this step is to coat chamber walls and prepare it for deposition. |
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# Deposition |
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#* Vent the chamber and load the substrate (place it in the center of platen). You can place small pieces around the wafer to protect it from moving. |
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#* Pump down. |
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#* Load the deposition recipe (SiN@250C), and run it. Deposition time is variable. Get the rate from [https://wiki.nanotech.ucsb.edu/wiki/PECVD_Recipes#PECVD_1_.28PlasmaTherm_790.29 historical data]. |
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#* Unload the wafer. |
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# Cleaning |
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#* Wipe sidewall first with DI water, followed by IPA. |
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#* Load the cleaning recipe (CH4/O2 clean). Edit the recipe and enter required time for cleaning. |
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#* Log out |
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=== Standard Oxide, SiO2 (Silicon Dioxide) Deposition === |
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==== SiO2 Deposition ==== |
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#Log in to PECVD #1 |
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# Seasoning |
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#* Load the seasoning recipe( SiO2 seasoning), and run it. The goal of this step is to coat chamber walls and prepare it for deposition. |
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# Deposition |
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#* Vent the chamber and load the substarte (place it in the center of platen). You can place small pieces around the wafer to protect it from moving. |
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#* Pump down. |
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#* Load the deposition recipe( SiO2@250C), and run it. Deposition time is variable. Get the rate from [[PECVD Recipes#PECVD 1 .28PlasmaTherm 790.29|historical data]]. |
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#* Unload the wafer. |
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# Cleaning |
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#* Wipe sidewall first with DI water, followed by IPA. |
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#* Load for cleaning recipe (CF4/O2). Edit the recipe and enter required time for cleaning. |
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#* Log out |
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Latest revision as of 20:16, 10 December 2020
There are two standard recipes for SiN and SiO2 deposition at 250C in PECVD#1. Instructions bellow explain how to run process (seasoning, deposition, cleaning).
Standard Si3N4 (Silicon-Nitride) Deposition
SiN Deposition
- Log in to PECVD #1
- Seasoning
- Load the seasoning recipe (SiN seasoning), and run it. The goal of this step is to coat chamber walls and prepare it for deposition.
- Deposition
- Vent the chamber and load the substrate (place it in the center of platen). You can place small pieces around the wafer to protect it from moving.
- Pump down.
- Load the deposition recipe (SiN@250C), and run it. Deposition time is variable. Get the rate from historical data.
- Unload the wafer.
- Cleaning
- Wipe sidewall first with DI water, followed by IPA.
- Load the cleaning recipe (CH4/O2 clean). Edit the recipe and enter required time for cleaning.
- Log out
Standard Oxide, SiO2 (Silicon Dioxide) Deposition
SiO2 Deposition
- Log in to PECVD #1
- Seasoning
- Load the seasoning recipe( SiO2 seasoning), and run it. The goal of this step is to coat chamber walls and prepare it for deposition.
- Deposition
- Vent the chamber and load the substarte (place it in the center of platen). You can place small pieces around the wafer to protect it from moving.
- Pump down.
- Load the deposition recipe( SiO2@250C), and run it. Deposition time is variable. Get the rate from historical data.
- Unload the wafer.
- Cleaning
- Wipe sidewall first with DI water, followed by IPA.
- Load for cleaning recipe (CF4/O2). Edit the recipe and enter required time for cleaning.
- Log out