PECVD1 Wafer Coating Process: Difference between revisions

From UCSB Nanofab Wiki
Jump to navigation Jump to search
No edit summary
(corrected titles)
 
(21 intermediate revisions by one other user not shown)
Line 1: Line 1:
There are two standard recipes for SiN and SiO2 deposition at 250C in PECVD#1. Instructions bellow explain how to run process (seasoning, deposition, cleaning).
⚫
== SiN @250C ==


=== Standard Si3N4 (Silicon-Nitride) Deposition ===
The wafers are ordered from SVM. These are low particle count 4" Si wafer where particle count is very low <100.
⚫
a)Log in to PECVD #1 (Staff account)
b)Edit standard recipes (for seasoning, deposition, and cleaning). You can ONLY change the time in recipes.
•Seasoning recipe name:
•Deposition recipe name:
•Cleaning recipe name:
⚫
c)Load the recipe for seasoning, and run it. The goal of this step is to coat chamber walls and prepare it for deposition.
⚫
d)Vent the chamber and load 4"Si wafer (place in in the center of platen). You can place small pieces around, to protect wafer from moving
e)Pump down and load the recipe for deposition.
f) Edit the recipe for deposition, change the time ONLY.
g) Run deposition
h) Wait for deposition to be finished. Unload the wafer
⚫
i) Wipe sidewall first with water then with IPA.
⚫
j) Load recipe for cleaning. Edit the recipe and enter required time for cleaning.


⚫
==== SiN Deposition ====
⚫
# Log in to PECVD #1
# Seasoning
⚫
#* Load the seasoning recipe (SiN seasoning), and run it. The goal of this step is to coat chamber walls and prepare it for deposition.
# Deposition
⚫
#* Vent the chamber and load the substrate (place it in the center of platen). You can place small pieces around the wafer to protect it from moving.
#* Pump down.
#* Load the deposition recipe (SiN@250C), and run it. Deposition time is variable. Get the rate from [https://wiki.nanotech.ucsb.edu/wiki/PECVD_Recipes#PECVD_1_.28PlasmaTherm_790.29 historical data].
#* Unload the wafer.
# Cleaning
#* Wipe sidewall first with DI water, followed by IPA.
#* Load the cleaning recipe (CH4/O2 clean). Edit the recipe and enter required time for cleaning.
#* Log out


=== Standard Oxide, SiO2 (Silicon Dioxide) Deposition ===


⚫
==== SiO2 Deposition ====

#Log in to PECVD #1

# Seasoning
⚫
== SiO2 @ 250C==
#* Load the seasoning recipe( SiO2 seasoning), and run it. The goal of this step is to coat chamber walls and prepare it for deposition.
# Deposition
#* Vent the chamber and load the substarte (place it in the center of platen). You can place small pieces around the wafer to protect it from moving.
#* Pump down.
#* Load the deposition recipe( SiO2@250C), and run it. Deposition time is variable. Get the rate from [[PECVD Recipes#PECVD 1 .28PlasmaTherm 790.29|historical data]].
#* Unload the wafer.
# Cleaning
⚫
#* Wipe sidewall first with DI water, followed by IPA.
⚫
#* Load for cleaning recipe (CF4/O2). Edit the recipe and enter required time for cleaning.
#* Log out

Latest revision as of 20:16, 10 December 2020

There are two standard recipes for SiN and SiO2 deposition at 250C in PECVD#1. Instructions bellow explain how to run process (seasoning, deposition, cleaning).

Standard Si3N4 (Silicon-Nitride) Deposition

SiN Deposition

  1. Log in to PECVD #1
  2. Seasoning
    • Load the seasoning recipe (SiN seasoning), and run it. The goal of this step is to coat chamber walls and prepare it for deposition.
  3. Deposition
    • Vent the chamber and load the substrate (place it in the center of platen). You can place small pieces around the wafer to protect it from moving.
    • Pump down.
    • Load the deposition recipe (SiN@250C), and run it. Deposition time is variable. Get the rate from historical data.
    • Unload the wafer.
  4. Cleaning
    • Wipe sidewall first with DI water, followed by IPA.
    • Load the cleaning recipe (CH4/O2 clean). Edit the recipe and enter required time for cleaning.
    • Log out

Standard Oxide, SiO2 (Silicon Dioxide) Deposition

SiO2 Deposition

  1. Log in to PECVD #1
  2. Seasoning
    • Load the seasoning recipe( SiO2 seasoning), and run it. The goal of this step is to coat chamber walls and prepare it for deposition.
  3. Deposition
    • Vent the chamber and load the substarte (place it in the center of platen). You can place small pieces around the wafer to protect it from moving.
    • Pump down.
    • Load the deposition recipe( SiO2@250C), and run it. Deposition time is variable. Get the rate from historical data.
    • Unload the wafer.
  4. Cleaning
    • Wipe sidewall first with DI water, followed by IPA.
    • Load for cleaning recipe (CF4/O2). Edit the recipe and enter required time for cleaning.
    • Log out
Retrieved from "https://wiki.nanofab.ucsb.edu/w/index.php?title=PECVD1_Wafer_Coating_Process&oldid=158656"